Global Patent Index - EP 0486295 B1

EP 0486295 B1 20010214 - Semiconductor memory device with redundant circuit

Title (en)

Semiconductor memory device with redundant circuit

Title (de)

Halbleiterspeichergerät mit redundanter Schaltung

Title (fr)

Dispositif de mémoire à semi-conducteur à circuit de redondance

Publication

EP 0486295 B1 20010214 (EN)

Application

EP 91310506 A 19911114

Priority

JP 31204490 A 19901116

Abstract (en)

[origin: EP0486295A2] A semiconductor memory device has regular memory cells (RC1 - RCm) arranged in rows and columns, and, when one of the regular memory cells in a row is defective, the row is replaced with redundant memory cells (RCr - RCs). A fuse element (34) is then broken so as to isolate the power supply line (BL1/BLn) associated with the row from the main power supply line (GND) so that a defective memory cell does not consume any current, thereby improving the power consumption of the semiconductor memory device, and avoiding the need to reject the device due to large current consumption. <IMAGE>

IPC 1-7

G06F 11/20

IPC 8 full level

G11C 11/413 (2006.01); G11C 11/401 (2006.01); G11C 11/407 (2006.01); G11C 29/00 (2006.01); G11C 29/04 (2006.01)

CPC (source: EP US)

G11C 29/83 (2013.01 - EP US); G11C 29/832 (2013.01 - EP US)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0486295 A2 19920520; EP 0486295 A3 19930728; EP 0486295 B1 20010214; DE 69132533 D1 20010322; DE 69132533 T2 20010809; JP 2782948 B2 19980806; JP H04182989 A 19920630; KR 960005367 B1 19960424; US 5295114 A 19940315

DOCDB simple family (application)

EP 91310506 A 19911114; DE 69132533 T 19911114; JP 31204490 A 19901116; KR 910020398 A 19911116; US 79262391 A 19911115