EP 0486295 B1 20010214 - Semiconductor memory device with redundant circuit
Title (en)
Semiconductor memory device with redundant circuit
Title (de)
Halbleiterspeichergerät mit redundanter Schaltung
Title (fr)
Dispositif de mémoire à semi-conducteur à circuit de redondance
Publication
Application
Priority
JP 31204490 A 19901116
Abstract (en)
[origin: EP0486295A2] A semiconductor memory device has regular memory cells (RC1 - RCm) arranged in rows and columns, and, when one of the regular memory cells in a row is defective, the row is replaced with redundant memory cells (RCr - RCs). A fuse element (34) is then broken so as to isolate the power supply line (BL1/BLn) associated with the row from the main power supply line (GND) so that a defective memory cell does not consume any current, thereby improving the power consumption of the semiconductor memory device, and avoiding the need to reject the device due to large current consumption. <IMAGE>
IPC 1-7
IPC 8 full level
G11C 11/413 (2006.01); G11C 11/401 (2006.01); G11C 11/407 (2006.01); G11C 29/00 (2006.01); G11C 29/04 (2006.01)
CPC (source: EP US)
G11C 29/83 (2013.01 - EP US); G11C 29/832 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0486295 A2 19920520; EP 0486295 A3 19930728; EP 0486295 B1 20010214; DE 69132533 D1 20010322; DE 69132533 T2 20010809; JP 2782948 B2 19980806; JP H04182989 A 19920630; KR 960005367 B1 19960424; US 5295114 A 19940315
DOCDB simple family (application)
EP 91310506 A 19911114; DE 69132533 T 19911114; JP 31204490 A 19901116; KR 910020398 A 19911116; US 79262391 A 19911115