EP 0486496 A1 19920527 - THYRISTOR.
Title (en)
THYRISTOR.
Title (de)
THYRISTOR.
Title (fr)
THYRISTOR.
Publication
Application
Priority
SE 8900617 A 19890223
Abstract (en)
[origin: WO9010311A1] An MOS field effect transistor controlled thyristor is formed with a large number of mutually identical thyristor modules, each one having a base region (3) and an emitter region (4) contiguous to the base region, which between them form an emitter junction. Each module has an MOS transistor (7, 8, 9, 10), integrated with the thyristor module, for controllable shunting of the emitter junction for turn-off of the thyristor module. The MOS transistor is of depletion type and its control electrode (10) is connected, by way of a current-limiting device (R) separate for the module, to a turn-off control connection (SS) common to all the modules of the thyristor.
Abstract (fr)
Un thyristor présente une structure de thyristor produite dans un corps semi-conducteur (1). Des couches électro-isolantes (12a, 12b, 12c, 12d) sont agencées sur ledit corps semi-conducteur. Sur ces couches on a produit des éléments semi-conducteurs régulables (6a à 6d) connectés à la couche émettrice (5a à 5d) et à la couche de base (2) du thyristor. On utilise les éléments semi-conducteurs régulables pour raccourcir de manière régulée au moins une des jonctions émettrices du thyristor.
IPC 1-7
IPC 8 full level
H01L 29/423 (2006.01); H01L 29/73 (2006.01); H01L 29/74 (2006.01); H01L 29/744 (2006.01); H01L 29/745 (2006.01); H01L 29/749 (2006.01); H01L 29/786 (2006.01); H01L 29/808 (2006.01)
CPC (source: EP)
H01L 29/42308 (2013.01); H01L 29/42384 (2013.01); H01L 29/7317 (2013.01); H01L 29/7404 (2013.01); H01L 29/744 (2013.01); H01L 29/745 (2013.01); H01L 29/7455 (2013.01); H01L 29/78612 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 29/8086 (2013.01)
Citation (search report)
See references of WO 9010310A1
Designated contracting state (EPC)
CH DE FR GB LI
DOCDB simple family (publication)
WO 9010311 A1 19900907; EP 0486496 A1 19920527; JP H04503735 A 19920702; SE 463235 B 19901022; SE 8900617 D0 19890222; SE 8900617 L 19900824; WO 9010310 A1 19900907
DOCDB simple family (application)
SE 9000123 W 19900222; EP 90904462 A 19900222; JP 50429490 A 19900222; SE 8900617 A 19890223; SE 9000122 W 19900222