Global Patent Index - EP 0490652 A3

EP 0490652 A3 19930127 - A READ/WRITE MEMORY HAVING AN IMPROVED WRITE DRIVER

Title (en)

A READ/WRITE MEMORY HAVING AN IMPROVED WRITE DRIVER

Publication

EP 0490652 A3 19930127 (EN)

Application

EP 91311508 A 19911211

Priority

US 62705990 A 19901213

Abstract (en)

[origin: EP0490652A2] A static random-access memory is disclosed which utilizes bit line pairs for each column of memory cells for communication of data between external data terminals and the memory cells. A precharge transistor is connected between each bit line and a precharge voltage, for example Vcc, and an equilibration transistor is connected between the bit lines in each bit line pair. The precharge and equilibration transistors are controlled according to selection of the column, so that all columns which are not selected by the column address are precharged and equilibrated, including the unselected columns in the same sub-array as the selected columns. In an additional embodiment of the invention, a data transition detection circuit also controls the precharge and equilibration transistors, so that the precharge and equilibration transistors for the selected columns are turned on responsive to an input data transition during a write operation; this assists the write drivers in more quickly writing the new data onto the bit lines. Source followers are provided in the write drivers, connected to the input/output lines, to assist in the write recovery (i.e., in pulling the input/output lines high upon completion of the write operation), without requiring critical timing control. The source followers also serve to clamp the bit line voltage swing during a read, without providing a load on the bit lines during establishment of the differential voltage thereupon. <IMAGE>

IPC 1-7

G11C 11/419; G11C 7/00

IPC 8 full level

G11C 11/413 (2006.01); G11C 7/10 (2006.01); G11C 11/417 (2006.01); G11C 11/419 (2006.01)

CPC (source: EP KR US)

G11C 7/1048 (2013.01 - EP US); G11C 7/1078 (2013.01 - EP US); G11C 7/1096 (2013.01 - EP US); G11C 11/40 (2013.01 - KR); G11C 11/419 (2013.01 - EP US)

Citation (search report)

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

EP 0490652 A2 19920617; EP 0490652 A3 19930127; EP 0490652 B1 19971022; DE 69128021 D1 19971127; DE 69128021 T2 19980312; JP 3322412 B2 20020909; JP H04291093 A 19921015; KR 100228622 B1 19991101; KR 920013449 A 19920729; US 5267197 A 19931130

DOCDB simple family (application)

EP 91311508 A 19911211; DE 69128021 T 19911211; JP 32728191 A 19911211; KR 910022986 A 19911213; US 62705990 A 19901213