EP 0494395 A2 19920715 - A graded channel field effect transistor.
Title (en)
A graded channel field effect transistor.
Title (de)
Feldeffekttransistor mit geneigtem Kanal.
Title (fr)
Transistor à effet de champ à canal graduel.
Publication
Application
Priority
US 63962591 A 19910110
Abstract (en)
A MISFET having a graded semiconductor alloy channel layer (18) of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/335 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/778 (2006.01)
CPC (source: EP US)
H01L 29/1029 (2013.01 - EP US); H01L 29/1054 (2013.01 - EP US); H01L 29/161 (2013.01 - EP US); H01L 29/165 (2013.01 - EP US); H01L 29/66431 (2013.01 - EP US); H01L 29/7782 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0494395 A2 19920715; EP 0494395 A3 19930414; EP 0494395 B1 19990811; DE 69131520 D1 19990916; DE 69131520 T2 20000330; JP H04247664 A 19920903; JP H0691249 B2 19941114; US 5821577 A 19981013
DOCDB simple family (application)
EP 91121249 A 19911211; DE 69131520 T 19911211; JP 25922891 A 19911007; US 98534492 A 19921130