Global Patent Index - EP 0495494 A1

EP 0495494 A1 19920722 - Electrically erasable phase change memory.

Title (en)

Electrically erasable phase change memory.

Title (de)

Elektrisch löschbarer Phasenänderungsspeicher.

Title (fr)

Mémoire à changement de la phase, effaçable électriquement.

Publication

EP 0495494 A1 19920722 (EN)

Application

EP 92100660 A 19920116

Priority

US 64298491 A 19910118

Abstract (en)

An electrically erasable phase change memory utilizing a stoichiometrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved. <IMAGE>

IPC 1-7

G11C 13/00

IPC 8 full level

H01L 27/10 (2006.01); G11C 11/56 (2006.01); G11C 16/02 (2006.01); H01H 45/00 (2006.01); H01L 21/8247 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01); H01L 27/24 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 45/00 (2006.01)

CPC (source: EP KR US)

G11C 11/56 (2013.01 - EP US); G11C 11/5678 (2013.01 - EP US); G11C 13/0004 (2013.01 - EP US); H01L 27/10 (2013.01 - KR); H10B 63/20 (2023.02 - EP US); H10B 63/80 (2023.02 - EP US); H10B 69/00 (2023.02 - EP US); H10N 70/063 (2023.02 - EP US); H10N 70/231 (2023.02 - EP US); H10N 70/826 (2023.02 - EP US); H10N 70/8828 (2023.02 - EP US); G11C 13/04 (2013.01 - EP US)

Citation (search report)

Designated contracting state (EPC)

AT BE CH DE DK ES FR GB GR IT LI LU NL PT SE

DOCDB simple family (publication)

EP 0495494 A1 19920722; EP 0495494 B1 19960626; AT E139862 T1 19960715; CA 2059476 C 19950627; CN 1044046 C 19990707; CN 1064366 A 19920909; DE 69211719 D1 19960801; DE 69211719 T2 19961031; JP 3224253 B2 20011029; JP H0521740 A 19930129; KR 100196489 B1 19990615; KR 920015557 A 19920827; MX 9200210 A 19920801; RU 2130217 C1 19990510; TW 231354 B 19941001; US 5166758 A 19921124

DOCDB simple family (application)

EP 92100660 A 19920116; AT 92100660 T 19920116; CA 2059476 A 19920116; CN 92100956 A 19920118; DE 69211719 T 19920116; JP 694092 A 19920117; KR 920000702 A 19920118; MX 9200210 A 19920117; SU 5010820 A 19920117; TW 81100427 A 19920121; US 64298491 A 19910118