Global Patent Index - EP 0501785 A2

EP 0501785 A2 19920902 - Electron emitting structure and manufacturing method.

Title (en)

Electron emitting structure and manufacturing method.

Title (de)

Elektronenemittierende Struktur und Herstellungsverfahren.

Title (fr)

Structure pour émettre des électrons et procédé de fabrication.

Publication

EP 0501785 A2 19920902 (EN)

Application

EP 92301632 A 19920226

Priority

US 66418491 A 19910301

Abstract (en)

A field emitter includes an electron emitting structure (112) spaced from an anode structure (114), with the intervening gap (113) being substantially evacuated. The electron emitting structure (112) includes a first electrically conductive layer (128) spaced by an insulating layer (130) from a second conductive layer (132), and a generally circular aperture (134) disposed through the layers (128,132). The anode structure (114) includes an electrically conductive layer (142). Electrostatic forces, provided from a potential applied between the first conductive layer (128) and the anode structure (114), cause an electron beam to be drawn from a cathode provided by a peripheral edge portion (127a) of the first conductive layer (128) within the aperture (134) onto an adjacent surface portion of the anode structure (114). Such field emission occurs under the control of a potential applied between the first and second conductive layers (128,132) of the electron emitting structure with the second conductive layer (132) functioning as a control electrode of the emitting structure. The anode structure (114) has a phosphor layer (144) which converts the electrical energy from the electron bombardment into visible light energy. In one embodiment (Fig. 6), a potential applied to a third conductive layer (360) of the emitting structure (312) serves to focus the electron stream on the anode structure (314). Methods of manufacturing the electron emitting structures employ successive steps of layer deposition and subsequent selective etching. <IMAGE>

IPC 1-7

H01J 1/30; H01J 9/02; H01J 17/49

IPC 8 full level

H01J 1/304 (2006.01); H01J 3/02 (2006.01); H01J 3/18 (2006.01); H01J 9/02 (2006.01); H01J 29/04 (2006.01); H01J 29/62 (2006.01); H01J 31/12 (2006.01)

CPC (source: EP KR)

H01J 3/021 (2013.01 - EP); H01J 9/025 (2013.01 - EP); H01J 31/127 (2013.01 - EP); H05B 33/00 (2013.01 - KR); H01J 2329/8625 (2013.01 - EP)

Designated contracting state (EPC)

DE FR GB IT NL SE

DOCDB simple family (publication)

EP 0501785 A2 19920902; EP 0501785 A3 19921119; CA 2060809 A1 19920902; JP H04328222 A 19921117; KR 920019215 A 19921022

DOCDB simple family (application)

EP 92301632 A 19920226; CA 2060809 A 19920207; JP 4488492 A 19920302; KR 920003025 A 19920227