EP 0509247 A3 19930113 - INFRARED DETECTOR
Title (en)
INFRARED DETECTOR
Publication
Application
Priority
JP 5096391 A 19910315
Abstract (en)
[origin: EP0509247A2] An infrared detector utilizing photoconduction in a multiquantum well formed of GaAs layers and AlGaAs layers. The dark current of the infrared detector is reduced by three orders or more by making one of the AlGaAs layers which form barrier layers (3) thick approximately twice that of the other barrier layers (3). Since responsivity is not substantially affected by a thick barrier layer (3), an S/N ratio is increased by one order or more. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 31/0264 (2006.01); H01L 31/0352 (2006.01); H01L 31/10 (2006.01)
CPC (source: EP)
B82Y 20/00 (2013.01); H01L 31/035236 (2013.01)
Citation (search report)
- [A] EP 0149178 A2 19850724 - TEXAS INSTRUMENTS INC [US]
- [A] EP 0345972 A1 19891213 - AMERICAN TELEPHONE & TELEGRAPH [US]
- [XP] US 5077593 A 19911231 - SATO ROBERT N [US], et al
- [A] APPLIED PHYSICS LETTERS. vol. 56, no. 9, 26 February 1990, NEW YORK US pages 851 - 853 LEVINE ET AL. 'HIGH SENSITIVITY LOW DARK CURRENT 10 um GaAs QUANTUM WELL INFRARED PHOTODETECTORS'
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0509247 A2 19921021; EP 0509247 A3 19930113; EP 0509247 B1 19961106; DE 69214991 D1 19961212; DE 69214991 T2 19970605; JP 2797738 B2 19980917; JP H04286373 A 19921012
DOCDB simple family (application)
EP 92104417 A 19920313; DE 69214991 T 19920313; JP 5096391 A 19910315