Global Patent Index - EP 0509631 A1

EP 0509631 A1 1992-10-21 - Antifuses having minimum areas.

Title (en)

Antifuses having minimum areas.

Title (de)

Antischmelzsicherungen mit minimalischen Oberflächen.

Title (fr)

Antifusibles avec superfixie minimale.

Publication

EP 0509631 A1 (EN)

Application

EP 92301723 A

Priority

US 68743791 A

Abstract (en)

Antifuses having minimum areas are formed by a process including the steps of forming doped regions (12) in a semiconductor substrate, forming a dielectric layer (14,16) over the surface of the substrate, performing masking and etching steps to form apertures in the dielectric layer over portions of the doped regions where antifuses are to be formed, depositing a second dielectric layer (20) over the first dielectric layer and the apertures, the second dielectric layer having a faster etch rate than the first dielectric layer, etching the second dielectric layer to leave spacers (22) at the edges of the apertures, forming the antifuse dielectric (26) in the apertures, and forming upper antifuse electrodes (28) over the antifuse dielectric. In another process, a process for forming antifuses includes the steps of forming a dielectric layer over the surface of a semiconductor substrate, forming a first layer of polysilicon over the insulating layer, forming apertures in between portions of the first polysilicon layer where antifuses are to be formed, doping the exposed regions in the substrate using the polysilicon as a masking member, depositing an oxide over the polysilicon regions, etching the oxide to expose the substrate between the regions of first layer polysilicon, forming the antifuse dielectric in the apertures, and forming upper antifuse electrodes over the antifuse dielectric. The process of the present invention may also be used to form antifuses in layers above the substrate. <IMAGE>

IPC 1-7 (main, further and additional classification)

H01L 23/525

IPC 8 full level (invention and additional information)

G11C 17/06 (2006.01); H01L 21/82 (2006.01); H01L 23/525 (2006.01)

CPC (invention and additional information)

H01L 23/5252 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/3011 (2013.01); Y10S 148/055 (2013.01)

Combination set (CPC)

H01L 2924/0002 + H01L 2924/00

Citation (search report)

Designated contracting state (EPC)

AT BE CH DE ES FR GB GR IT LI LU NL SE

DOCDB simple family

EP 0509631 A1 19921021; JP H05136273 A 19930601; US 5508220 A 19960416