EP 0513100 A1 19921119 - SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE.
Title (en)
SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE.
Title (de)
HALBLEITERANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG.
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR ET PROCEDE DE FABRICATION DE CE DERNIER.
Publication
Application
Priority
SE 9000245 A 19900124
Abstract (en)
[origin: WO9111822A1] A semiconductor device has a substrate and an active layer (5) of silicon arranged on the substrate, in which active layer the active parts of the device are formed. Between the substrate (1) and the active layer (5), a layer (3) of diamond is arranged and between the diamond layer and the active layer, a layer (4) of silicon dioxide is arranged.
Abstract (fr)
Un dispositif semi-conducteur est constitué d'un substrat et d'une couche active (5) de silicium disposée sur le substrat et dans laquelle sont formées les parties actives du dispositif. Une couche (3) de diamant est prise entre le substrat (1) et la couche active (5) et une couche (4) de dioxyde de silicium est prise entre la couche de diamant et la couche active.
IPC 1-7
IPC 8 full level
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP)
H01L 21/2007 (2013.01); H01L 21/76251 (2013.01)
Citation (search report)
See references of WO 9111822A1
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 9111822 A1 19910808; EP 0513100 A1 19921119; JP H05503812 A 19930617; SE 465492 B 19910916; SE 9000245 D0 19900124; SE 9000245 L 19910725
DOCDB simple family (application)
SE 9100029 W 19910117; EP 91903273 A 19910117; JP 50384891 A 19910117; SE 9000245 A 19900124