EP 0513644 B1 19961127 - Field effect thin film transistor and method of manufacturing the same
Title (en)
Field effect thin film transistor and method of manufacturing the same
Title (de)
Dünnfilm-Feldeffekttransistor und statische und Herstellungsmethode dafür
Title (fr)
Transistor à effet de champ en couche mince et procédé sa fabrication
Publication
Application
Priority
JP 10451691 A 19910509
Abstract (en)
[origin: EP0513644A2] A structure of a thin film transistor capable of reducing the power consumption in the waiting state and stabilizing the data holding characteristic in application of the thin film transistor as a load transistor in a memory cell in a CMOS-type SRAM is provided. A gate electrode (1) is formed of a polycrystalline silicon film on a substrate (1000) having an insulating property. A gate insulating film (2) is formed on the gate electrode (1). A polycrystalline silicon film (3) is formed on the gate electrode (1) with the gate insulating film (2) interposed therebetween. Source/drain regions including a region (6) of low concentration and a region (8) of high concentration are formed in one and another regions of the polycrystalline silicon film (3) separated by the gate electrode (1). Thus, the thin film transistor is formed. The thin film transistor is applied to p-channel MOS transistors (35, 36) serving as load transistors in a memory cell of a CMOS-type SRAM. P-channel MOS transistors (35, 36) are connected to n-channel MOS transistors (33, 34) serving as driver transistors in the memory cell. The n-channel MOS transistors (33, 34) are formed in a p-type well region (500), and the p-channel MOS transistors (35, 36) are formed on an interlayer insulating film (111) on the n-channel MOS transistors (33, 34). <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/8247 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 10/00 (2023.01)
CPC (source: EP KR US)
H01L 29/66765 (2013.01 - EP KR US); H01L 29/78621 (2013.01 - EP KR US); H10B 10/125 (2023.02 - EP KR US); Y10S 257/903 (2013.01 - EP KR US)
Designated contracting state (EPC)
DE FR NL
DOCDB simple family (publication)
EP 0513644 A2 19921119; EP 0513644 A3 19930224; EP 0513644 B1 19961127; DE 69215429 D1 19970109; DE 69215429 T2 19970515; JP H04334054 A 19921120; KR 920022534 A 19921219; KR 960016249 B1 19961207; US 5382807 A 19950117
DOCDB simple family (application)
EP 92107614 A 19920506; DE 69215429 T 19920506; JP 10451691 A 19910509; KR 920007645 A 19920506; US 19276194 A 19940207