Global Patent Index - EP 0525971 A3

EP 0525971 A3 19930224 - A SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING THE SAME

Title (en)

A SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING THE SAME

Publication

EP 0525971 A3 19930224 (EN)

Application

EP 92305782 A 19920624

Priority

JP 15154691 A 19910624

Abstract (en)

[origin: EP0525971A2] A semiconductor device includes a multiple layer structure including a substantially flat active layer (103), and a first semiconductor layer (101) and a second semiconductor layer (102) adjacent to each other, the semiconductor layers (101,102) having a corrugation (106) at an interface therebetween; and a generating device which is connectto the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layers (103), and the active layer (103) includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation (106) on an upper surface of the first semiconductor layer (101),and forming the rest of the multiple layer structure including the second semiconductor layer (102) and the active layer (103) by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure. <IMAGE>

IPC 1-7

H01L 33/00; H01S 3/19; H01S 3/085

IPC 8 full level

H01L 33/06 (2010.01); H01S 5/12 (2006.01); H01S 5/32 (2006.01); H01L 33/20 (2010.01); H01S 5/026 (2006.01); H01S 5/223 (2006.01); H01S 5/323 (2006.01); H01S 5/327 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01)

CPC (source: EP US)

B82Y 20/00 (2013.01 - EP US); H01L 33/06 (2013.01 - EP US); H01S 5/1228 (2013.01 - EP US); H01S 5/32 (2013.01 - EP US); H01L 33/20 (2013.01 - EP US); H01S 5/026 (2013.01 - EP US); H01S 5/1231 (2013.01 - EP US); H01S 5/223 (2013.01 - EP US); H01S 5/32308 (2013.01 - EP US); H01S 5/327 (2013.01 - EP US); H01S 5/341 (2013.01 - EP US); H01S 5/3412 (2013.01 - EP US); H01S 5/3428 (2013.01 - EP US); H01S 5/343 (2013.01 - EP US); H01S 5/3432 (2013.01 - EP US)

Citation (search report)

  • [Y] EP 0244140 A2 19871104 - HITACHI LTD [JP]
  • [X] PATENT ABSTRACTS OF JAPAN vol. 13, no. 594 (E-867)27 December 1989 & JP-A-01 248 585 ( KOKUSAI DENSHIN DENWA )
  • [A] IEEE JOURNAL OF QUANTUM ELECTRONICS. vol. QE-23, no. 6, June 1987, NEW YORK US pages 822 - 827 M. OISHI ET AL 'MOVPE grown 1.5 mum distributed feedback lasers on corrugated InP substrates'
  • [A] APPLIED PHYSICS LETTERS. vol. 56, no. 17, 23 April 1990, NEW YORK US pages 1620 - 1622 Y. LUO ET AL 'Purely gain coupled distributed feedback semiconductor lasers'
  • [AD] PATENT ABSTRACTS OF JAPAN vol. 8, no. 256 (E-280)22 November 1984 & JP-A-59 127 891 ( NIPPON DENKI )
  • [AD] PATENT ABSTRACTS OF JAPAN vol. 11, no. 51 (E-480)17 February 1987 & JP-A-61 212 084 ( NEC )
  • PATENT ABSTRACTS OF JAPAN vol. 11, no. 51 (E-480)17 February 1987 & JP-A-61 212 084 ( NEC )
  • JOURNAL OF CRYSTAL GROWTH. vol. 104, 1990, AMSTERDAM NL pages 766 - 772 F.S TURCO ET AL 'Molecular beam epitaxial growth of GaAs/AlAs and GaAs/AlGaAs quantum wells on sub micron period corrugated substrates'

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0525971 A2 19930203; EP 0525971 A3 19930224; EP 0525971 B1 19970514; DE 69219688 D1 19970619; DE 69219688 T2 19971218; US 5309472 A 19940503

DOCDB simple family (application)

EP 92305782 A 19920624; DE 69219688 T 19920624; US 90378592 A 19920624