Global Patent Index - EP 0533475 A3

EP 0533475 A3 19930901 - OPTICAL SEMICONDUCTOR DEVICE, METHOD OF PRODUCING THE OPTICAL SEMICONDUCTOR DEVICE, AND LASER DEVICE USING OPTICAL SEMICONDUCTOR DEVICES

Title (en)

OPTICAL SEMICONDUCTOR DEVICE, METHOD OF PRODUCING THE OPTICAL SEMICONDUCTOR DEVICE, AND LASER DEVICE USING OPTICAL SEMICONDUCTOR DEVICES

Publication

EP 0533475 A3 19930901 (EN)

Application

EP 92308484 A 19920917

Priority

  • JP 17712392 A 19920703
  • JP 23614491 A 19910917
  • JP 30818391 A 19911125

Abstract (en)

[origin: EP0533475A2] An optical semiconductor device includes first and second cladding layers, a light guide layer sandwiched between the first and second cladding layers, and a layer structure provided in the light guide layer. The layer structure has a first periodic variation in a refractive index in a predetermined direction, and a second periodic variation in an optical gain in the predetermined direction. The first variation has a period identical to that of the second periodic variation. The first periodic variation and the second periodic variation have a phase difference. <IMAGE>

IPC 1-7

H01S 3/085; H01S 3/25; H01L 33/00; H04B 10/12

IPC 8 full level

G02B 6/124 (2006.01); H01S 5/026 (2006.01); H01S 5/12 (2006.01); H01S 5/40 (2006.01); H01S 5/50 (2006.01)

CPC (source: EP US)

G02B 6/124 (2013.01 - EP US); H01S 5/026 (2013.01 - EP US); H01S 5/1228 (2013.01 - EP US); H01S 5/4025 (2013.01 - EP US); H01S 5/50 (2013.01 - EP US)

Citation (search report)

  • [A] US 4178604 A 19791211 - NAKAMURA MICHIHARU [JP], et al
  • [A] EP 0362789 A2 19900411 - CANON KK [JP]
  • [A] US 4942366 A 19900717 - TODA MINORU [US]
  • [A] ELECTRONICS LETTERS. vol. 27, no. 10, 9 May 1991, STEVENAGE, HERTS, GB pages 831 - 833 J. WILLEMS ET AL 'Filter characteristics of DBR amplifier with index and gain coupling.'
  • [A] IEEE JOURNAL OF QUANTUM ELECTRONICS. vol. 27, no. 6, June 1991, NEW YORK US pages 1714 - 1723 K. DAVID ET AL. 'Gain-coupled DFB lasers versus index-coupled and phase-shifted DFB lasers, a comparison based on spatial hole burning corrected yield.'
  • [A] PATENT ABSTRACTS OF JAPAN vol. 13, no. 594 (E-867)27 December 1989 & JP-A-01 248 585 ( KOKUSAI DENSHIN DENWA CO LTD )
  • [A] APPLIED PHYSICS LETTERS. vol. 56, no. 17, 23 April 1990, NEW YORK US pages 1620 - 1622 Y.LUO ET AL 'Purely gain-coupled DFB lasers'
  • [A] JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS. EXTENDED ABSTRACTS OF THE 1991 CONFERENCE ON SOLID STATE DEVICES AND MATERIALS vol. LD, no. 8-3, 27 August 1991, YOKOHAMA, JP pages 745 - 746 T. INOUE ET AL 'fabrication of InGaAsP/InP gain-coupled DFB laser'
  • [A] PATENT ABSTRACTS OF JAPAN vol. 13, no. 126 (E-734)28 March 1989 & JP-A-63 293 892 ( HITACHI )
  • [A] PATENT ABSTRACTS OF JAPAN vol. 11, no. 288 (E-542)17 September 1987 & JP-A-62 089 383 ( MATSUSHITA ELECTRIC IND CO LTD )
  • [A] PATENT ABSTRACTS OF JAPAN vol. 15, no. 209 (E-1072)28 May 1991 & JP-A-03 058 410 ( NEC CORP )
  • [A] PATENT ABSTRACTS OF JAPAN vol. 15, no. 258 (E-1084)28 June 1991 & JP-A-03 084 924 ( MATSUSHITA ELECTRIC IND CO )

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0533475 A2 19930324; EP 0533475 A3 19930901; EP 0533475 B1 19970702; DE 69220636 D1 19970807; DE 69220636 T2 19971016; US 5347533 A 19940913

DOCDB simple family (application)

EP 92308484 A 19920917; DE 69220636 T 19920917; US 94548492 A 19920915