EP 0543257 A3 19940713 - METHOD OF MANUFACTURING A POWER-MISFET
Title (en)
METHOD OF MANUFACTURING A POWER-MISFET
Publication
Application
Priority
DE 4137341 A 19911113
Abstract (en)
[origin: EP0543257A2] A fabrication method for a low-voltage power MISFET is described, which method uses as few as three masks (photosteps). In the first step, a polysilicon layer (3) is patterned and a cell array and edge zones are produced. An oxide layer (2) is then applied which, in the second photostep, is opened above the cells and the edge zones and between the edge (4) and the cells. A metal layer is then applied which is broken by the third photostep between the cells and the edge (4). This produces magnetoresistors and channel stoppers (9). As a final step, a weakly conducting layer (20) is applied to the entire surface. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01)
CPC (source: EP US)
H01L 23/3171 (2013.01 - EP US); H01L 29/405 (2013.01 - EP US); H01L 29/66727 (2013.01 - EP US); H01L 29/7811 (2013.01 - EP US); H01L 29/0638 (2013.01 - EP US); H01L 29/402 (2013.01 - EP US); H01L 29/42376 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); Y10S 148/126 (2013.01 - EP US); Y10S 438/958 (2013.01 - EP US)
Citation (search report)
- [A] EP 0227894 A2 19870708 - SILICONIX INC [US]
- [A] EP 0241059 A2 19871014 - SILICONIX INC [US]
- [A] US 4399449 A 19830816 - HERMAN THOMAS [US], et al
- [A] EP 0313249 A1 19890426 - AMERICAN TELEPHONE & TELEGRAPH [US]
- [A] EP 0000480 A1 19790207 - SIEMENS AG [DE]
- [A] PATENT ABSTRACTS OF JAPAN vol. 012, no. 304 (E - 646) 18 August 1988 (1988-08-18)
- [A] PATENT ABSTRACTS OF JAPAN vol. 011, no. 257 (E - 534) 20 August 1987 (1987-08-20)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 4137341 C1 19930429; EP 0543257 A2 19930526; EP 0543257 A3 19940713; JP 3267357 B2 20020318; JP H05243267 A 19930921; US 5302537 A 19940412
DOCDB simple family (application)
DE 4137341 A 19911113; EP 92119217 A 19921110; JP 32467392 A 19921111; US 97618992 A 19921113