EP 0544387 B1 19961023 - High gain monolithic microwave integrated circuit amplifier
Title (en)
High gain monolithic microwave integrated circuit amplifier
Title (de)
Monolithisch integrierter Mikrowellenverstärker mit hoher Verstärkung
Title (fr)
Amplificateur MMIC à gain élevé
Publication
Application
Priority
US 78426091 A 19911029
Abstract (en)
[origin: EP0544387A1] Linear high gain (greater than 20 dB) and high power (greater than +20 dbm) devices for RF power amplifiers are achieved using either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing network. Resistor-capacitor feedback circuits utilize only two capacitiveelements Cblock, Cf6 which are provided as a single three-terminal element having a common lower plate. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 27/06 (2006.01); H03F 1/34 (2006.01); H03F 3/19 (2006.01); H03F 3/195 (2006.01); H03F 3/60 (2006.01)
CPC (source: EP US)
H01L 27/0688 (2013.01 - EP US); H03F 1/34 (2013.01 - EP US); H03F 3/19 (2013.01 - EP US); H01L 2224/49113 (2013.01 - EP US); H01L 2924/01014 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01322 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US); H01L 2924/1423 (2013.01 - EP US); H01L 2924/19041 (2013.01 - EP US); H01L 2924/3011 (2013.01 - EP US); H01L 2924/30111 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
US 5166639 A 19921124; DE 69214777 D1 19961128; DE 69214777 T2 19970220; EP 0544387 A1 19930602; EP 0544387 B1 19961023; JP H05251963 A 19930928
DOCDB simple family (application)
US 78426091 A 19911029; DE 69214777 T 19920608; EP 92305210 A 19920608; JP 15319692 A 19920612