EP 0550255 A3 19930825 - TRANSISTOR SPACER STRUCTURE
Title (en)
TRANSISTOR SPACER STRUCTURE
Publication
Application
Priority
US 81662791 A 19911231
Abstract (en)
[origin: EP0550255A2] A method is provided for forming a transistor spacer etch endpoint structure of an integrated circuit, and an integrated circuit formed according to the same. A gate is formed over a portion of a substrate. A dielectric layer is formed over the integrated circuit and an oxide layer is formed over the dielectric layer. the oxide layer is patterned and etched to form sidewall oxide spacers on each side of the gate and over a portion of the dielectric layer. The dielectric layer not covered by the sidewall oxide spacers is then removed. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/266 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/266 (2013.01 - EP US); H01L 29/6656 (2013.01 - EP US); H01L 29/6659 (2013.01 - EP US)
Citation (search report)
- [X] IBM TECHNICAL DISCLOSURE BULLETIN. vol. 26, no. 3B, August 1983, NEW YORK US pages 1316 - 1317 J.M. BLUM ET AL. 'SIDEWALL OXIDE STRUCTURE AND METHOD FOR POLYSILICON GATE DEVICES TO MINIMIZE CONSUMPTION OF FIELD OXIDE'
- [X] IBM TECHNICAL DISCLOSURE BULLETIN. vol. 24, no. 2, July 1981, NEW YORK US pages 1293 - 1295 P.J. TSANG 'Method to improve the controllability of lightly doped drain SiO2 spacer formation'
- [X] IEEE ELECTRON DEVICE LETTERS. vol. 10, no. 11, November 1989, NEW YORK US pages 487 - 489 CHIH-YUAN LU ET AL. 'Submicrometer salicide CMOS devices with self-aligned shallow/deep junctions'
- [A] IBM TECHNICAL DISCLOSURE BULLETIN. vol. 32, no. 8A, January 1990, NEW YORK US pages 312 - 313 'Method to minimize junction capacitance added by a punch-through (halo) implant'
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0550255 A2 19930707; EP 0550255 A3 19930825; EP 0550255 B1 19980311; DE 69224730 D1 19980416; DE 69224730 T2 19980730; JP H065621 A 19940114; US 5521411 A 19960528; US 6303452 B1 20011016
DOCDB simple family (application)
EP 92311751 A 19921223; DE 69224730 T 19921223; JP 34606492 A 19921225; US 27156594 A 19940707; US 42716395 A 19950424