EP 0558004 B1 19971022 - Refractory metal capped low resistivity metal conductor lines and vias
Title (en)
Refractory metal capped low resistivity metal conductor lines and vias
Title (de)
Mit schwerschmelzendem Metal abgedeckte metallische Leiterbahnen und Kontaktlöcher
Title (fr)
Pistes métalliques conductrices et trous de contact recouverts de métal réfractaire
Publication
Application
Priority
US 84169392 A 19920226
Abstract (en)
[origin: EP0558004A2] Electrically conducting vias and lines are created by a three step process. First, a controlled amount of a soft, low resistivity metal (12) is deposited in a trench or hole to a point below the top surface of the dielectric (10) in which the trench or hole is formed. Subsequently, the low resistivity metal (12) is overcoated with a hard metal (16) such as CVD tungsten. Finally, chemical-mechanical polishing is used to planarize the structure. The hard metal (16) serves the function of protecting the low resistivity metal (12) from scratches and corrosion which would ordinarily be encountered if the low resistivity metal were subjected to the harsh chemical-mechanical polishing slurries. An ideal method for partially filling trenches or holes in a substrate is by sputtering at elevated temperatures such that metallization at the bottom of a trench or hole separates from metallization on a top surface adjacent the trench or hole. An etchback procedure may also be used to separate metallization in a trench or hole from metallization adjacent a trench or hole. Trenchs and holes may also be filled by selective deposition. In addition, trenches and holes may also be lined by a metal liner (18) prior to metallization (12) deposition which can serve as a diffusion barrier.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/41 (2006.01)
CPC (source: EP KR US)
H01L 21/28 (2013.01 - KR); H01L 21/76843 (2013.01 - EP US); H01L 21/76849 (2013.01 - EP US); H01L 21/76876 (2013.01 - EP US); H01L 21/76877 (2013.01 - EP US); H01L 23/5226 (2013.01 - EP US); H01L 23/53223 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/09701 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
AT DE FR GB IE IT NL
DOCDB simple family (publication)
EP 0558004 A2 19930901; EP 0558004 A3 19940112; EP 0558004 B1 19971022; AT E159615 T1 19971115; CN 1027610 C 19950208; CN 1076547 A 19930922; DE 69314679 D1 19971127; DE 69314679 T2 19980402; HK 1001601 A1 19980626; JP 2989408 B2 19991213; JP H0684826 A 19940325; KR 930018701 A 19930922; KR 970006973 B1 19970501; TW 367599 B 19990821; US 5262354 A 19931116
DOCDB simple family (application)
EP 93102979 A 19930225; AT 93102979 T 19930225; CN 93101334 A 19930224; DE 69314679 T 19930225; HK 98100235 A 19980112; JP 1612393 A 19930203; KR 930000763 A 19930121; TW 82102881 A 19930415; US 84169392 A 19920226