Global Patent Index - EP 0560123 A3

EP 0560123 A3 19940525 - POWER TRANSISTOR WITH MULTIPLE FINGER CONTACTS

Title (en)

POWER TRANSISTOR WITH MULTIPLE FINGER CONTACTS

Publication

EP 0560123 A3 19940525 (DE)

Application

EP 93102867 A 19930224

Priority

DE 4207909 A 19920312

Abstract (en)

[origin: JPH0645520A] PURPOSE: To generate uniform heat at individual transistors by disposing finger- like contacts of the individual transistors so as to break the translational symmetry or mirror surface symmetry specified by one or a plurality of common contact surfaces. CONSTITUTION: A contact interval of individual transistors of a mutli-finger transistor is decided so as to obtain at least substantially equal highest temperature during operating in a previously given range of effective power, for all individual transistors by using a simulation calculation on temperature distribution. For example, an interval of the mutual transistors is set substantially equal, except the innermost and outermost side individual transistors of a row. Both the transistors of the innermost sides are shortened therebetween, and an interval to the transistor which continues to the outside is increased. Thus, uniform heat is generated at the individual transistors.

IPC 1-7

H01L 29/73; H01L 29/06

IPC 8 full level

H01L 23/48 (2006.01); H01L 25/10 (2006.01); H01L 25/18 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/73 (2006.01)

CPC (source: EP US)

H01L 29/0692 (2013.01 - EP US); H01L 29/0804 (2013.01 - EP US); H01L 29/0843 (2013.01 - EP US); H01L 29/73 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)

Citation (search report)

  • [A] FR 2538168 A1 19840622 - PHILIPS NV [NL]
  • [A] US 3704398 A 19721128 - FUKINO KATSUSHIGE
  • [A] EP 0126611 A2 19841128 - FUJITSU LTD [JP]
  • [A] EP 0405877 A2 19910102 - TEXAS INSTRUMENTS INC [US]
  • [A] PATENT ABSTRACTS OF JAPAN vol. 010, no. 376 (E - 464) 13 December 1986 (1986-12-13)
  • [AD] GUANG-BO GAO ET AL: "Thermal design studies of high-power heterojunction bipolar transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, MAY 1989, USA, VOL. 36, NR. 5, PAGE(S) 854 - 863, ISSN 0018-9383
  • [A] LINDSTED R D ET AL: "Steady-state junction temperatures of semiconductor chips", IEEE TRANSACTIONS ON ELECTRON DEVICES, JAN. 1972, USA, VOL. ED-19, NR. 1, PAGE(S) 41 - 44, ISSN 0018-9383

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

EP 0560123 A2 19930915; EP 0560123 A3 19940525; JP H0645520 A 19940218; US 5317176 A 19940531

DOCDB simple family (application)

EP 93102867 A 19930224; JP 7519193 A 19930308; US 2566793 A 19930303