Global Patent Index - EP 0585755 B1

EP 0585755 B1 19990310 - Apparatus providing a MOS temperature compensated voltage reference for low voltages and wide voltage ranges

Title (en)

Apparatus providing a MOS temperature compensated voltage reference for low voltages and wide voltage ranges

Title (de)

Vorrichtung zur Erzeugung einer MOS temperaturkompensierten Referenzspannung für niedrige Spannungen und grosse Betriebsspannungsbereiche

Title (fr)

Circuit pour générer une tension de référence MOS compensée en température pour des applications à tension basse et des grandes plages de fonctionnement

Publication

EP 0585755 B1 19990310 (EN)

Application

EP 93113334 A 19930820

Priority

US 94008492 A 19920903

Abstract (en)

[origin: EP0585755A1] A reference voltage generator which compensates for temperature and VCC variations includes a constant current source and a MOS P-channel transistor (28). The constant current source provides a constant current over a wide range of VCC that corresponds to biasing a p-channel transistor (28) in a region where its resistance is constant. The output of the current source is supplied to the P-channel transistor (28), which is in saturation. The constant current provides a constant voltage drop across the P-channel transistor (28). Hence, a stable reference voltage is generated. Temperature compensation is provided by biasing the P-channel transistor (28) to saturation and supplying a constant current that the corresponds to biasing a p-channel transistor (28) where the resistance is substantially constant over a temperature range. The current causes a voltage drop across the P-channel transistor (28) to maintain a stable reference voltage. Also, temperature compensation is further provided by utilizing the negative temperature coefficients of the resistors (14, 24) included in the constant current source. <IMAGE>

IPC 1-7

G05F 3/24

IPC 8 full level

H03G 3/02 (2006.01); G05F 3/24 (2006.01); G05F 3/26 (2006.01); H03K 19/00 (2006.01)

CPC (source: EP US)

G05F 3/245 (2013.01 - EP US); G05F 3/247 (2013.01 - EP US); Y10S 323/907 (2013.01 - EP US)

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

EP 0585755 A1 19940309; EP 0585755 B1 19990310; DE 69323818 D1 19990415; DE 69323818 T2 19991028; JP 2788843 B2 19980820; JP H06204838 A 19940722; US 5315230 A 19940524

DOCDB simple family (application)

EP 93113334 A 19930820; DE 69323818 T 19930820; JP 21983293 A 19930903; US 94008492 A 19920903