EP 0588094 A1 19940323 - Semiconductor device with reduced internal inductance.
Title (en)
Semiconductor device with reduced internal inductance.
Title (de)
Halbleiterverbundelement mit reduzierter interner Induktanz.
Title (fr)
Dispositif à semiconducteur ayant une inductance interne réduite.
Publication
Application
Priority
JP 22010692 A 19920819
Abstract (en)
A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate (9), a first conductor (11) fixed on said radiation plate, a first insulating layer (13) fixed on said first conductor, a second conductor (15) fixed on said first insulating layer, at least one semiconductor element (29,31) and a second insulating layer (23) fixed on said second conductor, a third conductor (25) fixed on said second insulating layer, a fourth conductor (33) for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal (7) fixed on said second conductor, and a second power terminal (5) fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 23/64 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H02M 7/00 (2006.01)
CPC (source: EP KR US)
H01L 23/645 (2013.01 - EP US); H01L 24/72 (2013.01 - EP US); H01L 24/73 (2013.01 - EP US); H01L 25/07 (2013.01 - KR); H01L 25/072 (2013.01 - EP US); H02M 7/003 (2013.01 - EP US); H01L 24/45 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 24/49 (2013.01 - EP US); H01L 2224/45124 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48227 (2013.01 - EP US); H01L 2224/48472 (2013.01 - EP US); H01L 2224/49175 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/12041 (2013.01 - EP US); H01L 2924/15787 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H01L 2924/30107 (2013.01 - EP US)
C-Set (source: EP US)
- H01L 2224/45124 + H01L 2924/00014
- H01L 2224/48091 + H01L 2924/00014
- H01L 2224/49175 + H01L 2224/48227 + H01L 2924/00
- H01L 2224/48472 + H01L 2224/48091 + H01L 2924/00
- H01L 2224/48472 + H01L 2224/48227 + H01L 2924/00
- H01L 2924/12041 + H01L 2924/00
- H01L 2924/15787 + H01L 2924/00
- H01L 2924/181 + H01L 2924/00
- H01L 2924/00014 + H01L 2224/05599
- H01L 2224/49175 + H01L 2224/48472 + H01L 2924/00
Citation (search report)
- [X] EP 0427143 A2 19910515 - ABB IXYS SEMICONDUCTOR GMBH [DE]
- [A] EP 0372228 A1 19900613 - SEMIKRON ELEKTRONIK GMBH [DE]
- [A] EP 0277546 A1 19880810 - SIEMENS AG [DE]
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0588094 A1 19940323; EP 0588094 B1 19990310; DE 69323823 D1 19990415; DE 69323823 T2 19990805; JP 3053298 B2 20000619; JP H0669415 A 19940311; KR 940004837 A 19940316; US 5347158 A 19940913
DOCDB simple family (application)
EP 93113283 A 19930819; DE 69323823 T 19930819; JP 22010692 A 19920819; KR 930015972 A 19930818; US 10761693 A 19930818