EP 0596473 A1 19940511 - Circuit for monitoring the drain current of a MOSFET.
Title (en)
Circuit for monitoring the drain current of a MOSFET.
Title (de)
Schaltung zur Überwachung des Drainstromes eines MOSFETS.
Title (fr)
Circuit pour surveiller le courant de drain d'un MOSFET.
Publication
Application
Priority
DE 4237122 A 19921103
Abstract (en)
In the case of a circuit arrangement for monitoring the drain current of a metal oxide semiconductor field effect transistor or T0 whose effective transistor area is subdivided in order to provide an MOS measuring transistor T0' and an MOS power transistor T0'' the drain-source paths of the two MOS transistor sections T0', T0'' are placed in different current loops SZa, SZb of a current mirror SP1, which is acted upon by a predeterminable reference current Uref. The current mirror SP1 has has an output terminal E, which supplies a monitoring signal dependent on the difference between the drain-source voltages of the two MOS field effect transistors T0', T0''. <IMAGE>
IPC 1-7
IPC 8 full level
G01R 19/165 (2006.01); G01R 31/26 (2014.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP KR US)
G01R 31/2621 (2013.01 - EP US); H01L 22/00 (2013.01 - KR)
Citation (search report)
- [X] US 5032745 A 19910716 - IZADINIA MANSOUR [US], et al
- [X] EP 0397102 A2 19901114 - UNITED TECHNOLOGIES AUTOMOTIVE [US]
- [A] EP 0386804 A2 19900912 - PHILIPS NV [NL]
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
DE 4237122 A1 19940505; DE 4237122 C2 19961212; EP 0596473 A1 19940511; JP H075225 A 19950110; KR 100277452 B1 20010115; KR 940012562 A 19940623; US 5436581 A 19950725
DOCDB simple family (application)
DE 4237122 A 19921103; EP 93117821 A 19931103; JP 30853193 A 19931102; KR 930023181 A 19931103; US 35075094 A 19941207