EP 0610893 A2 19940817 - Laser diode.
Title (en)
Laser diode.
Title (de)
Diodenlaser.
Title (fr)
Diode à laser.
Publication
Application
Priority
JP 2091293 A 19930209
Abstract (en)
A laser diode suitable for blue-green light emission utilizing type II heterojuctions of II-VI compound semiconductors. The laser diode comprises a layer 24 for confining electrons, a layer 26 for confining holes, and a quantum well layer which is formed bewteen the electron confinement layer 24 and the hole confinement layer 26 and allows the confined electrons and holes to recombine therein. The laser also comprises an electron barrier layer 23 and a hole barrier layer 27 for preventing diffusion of the electrons and holes beyond the barriers. The light emitted by the recombination is confined between the n -cladding layer 22 and a p-cladding layer 28. <IMAGE>
IPC 1-7
IPC 8 full level
H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/327 (2006.01); H01S 5/347 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01)
CPC (source: EP US)
B82Y 20/00 (2013.01 - EP US); H01S 5/20 (2013.01 - EP US); H01S 5/327 (2013.01 - EP US); H01S 5/347 (2013.01 - EP US); H01S 5/2009 (2013.01 - EP US); H01S 5/2013 (2013.01 - EP US); H01S 5/3068 (2013.01 - EP US); H01S 5/3213 (2013.01 - EP US); H01S 5/322 (2013.01 - EP US); H01S 5/3403 (2013.01 - EP US); H01S 5/3422 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0610893 A2 19940817; EP 0610893 A3 19941102; EP 0610893 B1 19970423; DE 69402733 D1 19970528; DE 69402733 T2 19970731; JP H06237039 A 19940823; JP H0773140 B2 19950802; US 5475700 A 19951212
DOCDB simple family (application)
EP 94101908 A 19940208; DE 69402733 T 19940208; JP 2091293 A 19930209; US 19422394 A 19940209