EP 0614225 B1 19980513 - Charge coupled device
Title (en)
Charge coupled device
Title (de)
Ladungsgekoppelte Anordnung
Title (fr)
Dispositif à couplage de charges
Publication
Application
Priority
EP 93200598 A 19930303
Abstract (en)
[origin: EP0614225A1] It is known to bring the surface into the inverted state in CCD imaging devices with buried channels during the integration period in order to keep the dark current low (All Gates Pinning). The desired potential profile, with wells in which the charge is integrated bounded by potential barriers, is obtained through the use of a two-phase structure with a doping profile in the channel or with a gate oxide having thickness differences. Owing to limiting conditions which hold for the clock voltages used for charge transport, serious limitations are imposed on the depth of the potential wells and thus also on the charge storage capacity of the pixels. This disadvantage is counteracted by the operation of the device not as a two-phase but, for example, as a four-phase CCD according to the invention, whereby a d.c. shift is present between the clock voltages for compensating the built-in, comparatively great potential differences described above. An imaging device is obtained thereby with a low dark current, a great charge storage capacity per pixel, and a high transport efficiency. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/762 (2006.01); H01L 21/339 (2006.01); H01L 27/148 (2006.01); H04N 25/00 (2023.01)
CPC (source: EP US)
H01L 27/14831 (2013.01 - EP US); H01L 27/14887 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
EP 0614225 A1 19940907; EP 0614225 B1 19980513; DE 69410147 D1 19980618; DE 69410147 T2 19981203; JP H0730102 A 19950131; US 5388137 A 19950207
DOCDB simple family (application)
EP 94200488 A 19940225; DE 69410147 T 19940225; JP 3145294 A 19940301; US 20472094 A 19940302