Title (en)

Multi quantum well semiconductor laser and optical communication system using the same

Title (de)

Multiquantumwell-Halbleiterlaser und optisches Kommunikationssystem mit einem derartigen Laser

Title (fr)

Laser à semi-conducteur à puits quantiques multiples et système de communication optique l'utilisant

Publication

EP 0615322 B1 19980701 (EN)

Application

EP 94103790 A 19940311

Priority

JP 5189293 A 19930312

Abstract (en)

[origin: EP0615322A2] A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 mu m to 1.33 mu m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 mu m. <IMAGE>

IPC 1-7

H01S 3/19; H04B 10/00

IPC 8 full level

H01S 5/12 (2006.01); H01S 5/343 (2006.01); H01S 5/062 (2006.01); H01S 5/34 (2006.01)

CPC (source: EP US)

B82Y 20/00 (2013.01 - EP US); H01S 5/12 (2013.01 - EP US); H01S 5/3434 (2013.01 - EP US); H01S 5/06226 (2013.01 - EP US); H01S 5/3407 (2013.01 - EP US); H01S 5/34306 (2013.01 - EP US); H01S 2301/06 (2013.01 - EP US); H01S 2302/00 (2013.01 - EP US)

Citation (examination)

• EP 0557727 A2 19930901 - NEC CORP [JP]
• Extended Abstracts of the 1993 International Conference on SOLID STATE DEVICES AND MATERIALS, pages 1035-1037, Chiba, Makuhari Messe (1993), August 28. - Sept. 01, Tokyo, Jp

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0615322 A2 19940914; EP 0615322 A3 19941228; EP 0615322 B1 19980701; DE 69411299 D1 19980806; DE 69411299 T2 19990225; US 5388118 A 19950207; US 5621747 A 19970415

DOCDB simple family (application)

EP 94103790 A 19940311; DE 69411299 T 19940311; US 20953894 A 19940311; US 36602794 A 19941229