EP 0621630 A1 19941026 - Polishstop planarization method and structure.
Title (en)
Polishstop planarization method and structure.
Title (de)
Verfahren zur Planasierung mit Hilfe einer Polierstopschicht und hergestellter Struktur.
Title (fr)
Méthode de planarisation faisant appel à une couche d'arrêt pour le polissage et structure obtenue.
Publication
Application
Priority
US 5191593 A 19930422
Abstract (en)
The invention provides a method for producing a substantially planar surface overlying features (40) of a semiconductor structure (38). The method comprises forming alternating layers of a hard polishing material (40,48) and a soft polishing material (46,50) the features (40) of the semiconductor structure (38), and then polishing the alternating layers to form a substantially planar surface over the features (40). <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/304 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC (source: EP US)
H01L 21/31053 (2013.01 - EP US); H01L 21/76819 (2013.01 - EP US)
Citation (search report)
- [A] EP 0224646 A2 19870610 - IBM [US]
- [A] US 5169491 A 19921208 - DOAN TRUNG T [US]
- [A] "PLANARISATION OF TUNGSTEN FILLED VIAS WITH STRINGENT TOPOGRAPHY", RESEARCH DISCLOSURE, vol. 340, August 1992 (1992-08-01), HAVANT GB, pages 647
- [A] "DIAMOND-LIKE FILMS AS A BARRIER TO CHEMICAL-MECHANICAL POLISH", IBM TECHNICAL DISCLOSURE BULLETIN., vol. 35, no. 1B, June 1992 (1992-06-01), NEW YORK US, pages 211 - 213
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0621630 A1 19941026; JP 2702398 B2 19980121; JP H06326065 A 19941125; KR 0133483 B1 19980423; US 5356513 A 19941018; US 5510652 A 19960423
DOCDB simple family (application)
EP 94104346 A 19940319; JP 7640094 A 19940324; KR 19940003105 A 19940222; US 31938894 A 19941006; US 5191593 A 19930422