EP 0622855 B1 20010627 - Drain/source contact of a thin film transistor
Title (en)
Drain/source contact of a thin film transistor
Title (de)
Drain/Source-Kontakt für Dünnfilmtransistor
Title (fr)
Contact drain/source pour transistor à couche mince
Publication
Application
Priority
- JP 10484293 A 19930430
- JP 12783893 A 19930430
Abstract (en)
[origin: EP0622855A2] The thin film transistor of the invention includes a substrate; a gate electrode (21) formed on the substrate; a semiconductor layer (27) insulated from the gate electrode (21), the semiconductor layer (27) being formed on the substrate to cover the gate electrode (21); a first contact layer (24) and a second contact layer (25) which are made of n-type microcrystalline silicon having a resistivity of 10 OMEGA cm or less, the first and second contact layers (24,25) being in contact with the semiconductor layer (27) so as to cover part of the gate electrode (21); a source electrode (22) which is in contact with part of the first contact layer (24); and a drain electrode (23) which is in contact with part of the second contact layer (25). <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/417 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP US)
H01L 29/41733 (2013.01 - EP US); H01L 29/78618 (2013.01 - EP US); H01L 29/78669 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0622855 A2 19941102; EP 0622855 A3 19960417; EP 0622855 B1 20010627; DE 69427556 D1 20010802; DE 69427556 T2 20020411; KR 0159318 B1 19981201; US 5473168 A 19951205
DOCDB simple family (application)
EP 94303130 A 19940429; DE 69427556 T 19940429; KR 19940009370 A 19940429; US 23380594 A 19940426