EP 0627769 B1 19980812 - Resonant tunneling diode with reduced valley current
Title (en)
Resonant tunneling diode with reduced valley current
Title (de)
Diode mit resorantem Tunneleffekt mit verringertem Talstrom
Title (fr)
Diode à effet tunnel résonnant ayant un courant de vallée réduit
Publication
Application
Priority
US 6533893 A 19930524
Abstract (en)
[origin: US5294809A] A resonant tunneling diode having a quantum well sandwiched between first and second tunnel barrier layers and the quantum well and tunnel barrier layers sandwiched between an injection layer and a collector layer. The improvement includes a relatively thin layer of semiconductor material sandwiched between either the first tunnel barrier layer and the injection layer or the first tunnel barrier layer and the quantum well. The thin semiconductor layer has a valence band with an energy level lower than the valence band of the first tunnel barrier layer so as to prevent minority carriers from travelling toward the injection layer.
IPC 1-7
IPC 8 full level
H01L 29/88 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 30/00 (2013.01 - EP US); H01L 29/882 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
US 5294809 A 19940315; DE 69412359 D1 19980917; DE 69412359 T2 19990304; EP 0627769 A2 19941207; EP 0627769 A3 19950524; EP 0627769 B1 19980812; JP 3149685 B2 20010326; JP H06350107 A 19941222
DOCDB simple family (application)
US 6533893 A 19930524; DE 69412359 T 19940520; EP 94107830 A 19940520; JP 12334194 A 19940513