EP 0632086 A3 19950830 - A method of producing a semiconducting material.
Title (en)
A method of producing a semiconducting material.
Title (de)
Verfahren zur Herstellung eines Halbleitermaterials.
Title (fr)
Procédé de préparation d'un matériau semiconducteur.
Publication
Application
Priority
JP 17235893 A 19930618
Abstract (en)
[origin: EP0632086A2] A method of producing a semiconducting material comprises reacting one or more of halogenosilanes with an alkali metal and/or an alkaline earth metal in an inert solvent to give a condensate and thermally decomposing the condensate. The condensate is dissolved in a suitable solvent such as toluene and tetrahydrofuran and applied by casting to a suitable substrate. The resulting semiconductor material in its film form has an optical band-gap (EO) of usually 0.1-4.0 eV.
IPC 1-7
IPC 8 full level
C08G 77/60 (2006.01); H01B 1/06 (2006.01); H01L 21/208 (2006.01); H01L 51/30 (2006.01)
CPC (source: EP)
C08G 77/60 (2013.01); H01B 1/06 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02628 (2013.01); H10K 85/40 (2023.02)
Citation (search report)
- [X] EP 0445306 A1 19910911 - CANON KK [JP]
- [A] EP 0282037 A2 19880914 - MITSUBISHI METAL CORP [JP]
- [A] EP 0264722 A2 19880427 - MITSUBISHI METAL CORP [JP]
- [A] DATABASE WPI Derwent World Patents Index; AN 93-080486
- [A] DATABASE WPI Derwent World Patents Index; AN 93-080487
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0632086 A2 19950104; EP 0632086 A3 19950830; EP 0632086 B1 19991006; DE 69421007 D1 19991111; DE 69421007 T2 20000127
DOCDB simple family (application)
EP 94304431 A 19940617; DE 69421007 T 19940617