EP 0638204 A1 19950215 - BASE RESISTANCE CONTROLLED MOS GATED THYRISTOR WITH IMPROVED TURN-OFF CHARACTERISTICS.
Title (en)
BASE RESISTANCE CONTROLLED MOS GATED THYRISTOR WITH IMPROVED TURN-OFF CHARACTERISTICS.
Title (de)
BASIS-WIDERSTANDS-GESTEUERTER MOS-GATE-THYRISTOR MIT VERBESSERTEM AUSSCHALT-VERHALTEN.
Title (fr)
THYRISTOR A GRILLE MOS COMMANDE PAR RESISTANCE DE BASE ET PRESENTANT DES CARACTERISTIQUES DE DESAMOR AGE AMELIOREES.
Publication
Application
Priority
- US 9303789 W 19930421
- US 87575192 A 19920429
Abstract (en)
[origin: WO9322798A1] An inventive thyristor structure includes anode and cathode electrodes, with a diverter electrode being connected to the cathode electrode. A multi-layer body of semiconductor material has a first surface and includes a regenerative portion (110) operatively coupled between the anode and cathode electrodes, with a non-regenerative portion (120) being operatively coupled between the anode and diverter electrodes. The regenerative portion includes adjacent first (170), second (180), third (200) and fourth regions (240) of alternating conductivity type arranged respectively in series between the cathode and anode electrodes, wherein the cathode electrode is in electrical contact with the first region and the anode electrode is in electrical contact with the fourth region.
IPC 1-7
IPC 8 full level
H01L 29/74 (2006.01); H01L 29/739 (2006.01); H01L 29/745 (2006.01); H01L 29/749 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP)
H01L 29/7455 (2013.01)
Citation (search report)
See references of WO 9322798A1
Designated contracting state (EPC)
AT BE CH DE DK ES FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 9322798 A1 19931111; CA 2133585 A1 19931111; EP 0638204 A1 19950215; JP H07506933 A 19950727
DOCDB simple family (application)
US 9303789 W 19930421; CA 2133585 A 19930421; EP 93910724 A 19930421; JP 51937293 A 19930421