Global Patent Index - EP 0640039 A4

EP 0640039 A4 19950419 - THIN FILM METALLIZATION AND BRAZING OF ALUMINUM NITRIDE.

Title (en)

THIN FILM METALLIZATION AND BRAZING OF ALUMINUM NITRIDE.

Title (de)

DÜNNSCHICHTMETALLISIERUNG UND HARTLÖTEN VON ALUMINIUMNITRID.

Title (fr)

METALLISATION EN COUCHE MINCE ET BRASAGE DE NITRURE D'ALUMINIUM.

Publication

EP 0640039 A4 19950419 (EN)

Application

EP 93913864 A 19930512

Priority

  • US 9304541 W 19930512
  • US 88192692 A 19920512
  • US 90411092 A 19920625

Abstract (en)

[origin: WO9323246A1] The aluminum nitride metallized structure (10) of the present invention includes a substrate (11) comprising an AlN sintered body and a metallized structure (21) formed on the substrate comprising a first layer (12) deposited on the sintered body and a second (B) layer deposited on the first layer (12). The first layer (12) comprises an alloy having the general formula (a) based on atomic percent: XxZ100-x wherein X is at least one member selected from the group consisting of Ti, Zr, Hf and the rare earth elements, Z is at least one member selected from the group consisting of Mo, W, Cr, Nb, V and Ta, and 10 < x < 60 atomic %. The second layer (13) comprises at least one member selected from the group consisting of Au, Co, Cu, Ni, and Fe.

IPC 1-7

B32B 9/00; B32B 15/04; B23K 31/02

IPC 8 full level

H05K 1/09 (2006.01); B32B 15/04 (2006.01); B32B 18/00 (2006.01); C04B 37/02 (2006.01); C04B 41/52 (2006.01); C04B 41/89 (2006.01); H05K 1/03 (2006.01); H05K 3/38 (2006.01); B23K 35/30 (2006.01)

CPC (source: EP KR)

B23K 31/02 (2013.01 - KR); B32B 9/00 (2013.01 - KR); B32B 15/04 (2013.01 - KR); C04B 37/026 (2013.01 - EP); C04B 41/009 (2013.01 - EP); C04B 41/52 (2013.01 - EP); C04B 41/89 (2013.01 - EP); B23K 35/3006 (2013.01 - EP); B23K 35/302 (2013.01 - EP); C04B 2237/12 (2013.01 - EP); C04B 2237/122 (2013.01 - EP); C04B 2237/123 (2013.01 - EP); C04B 2237/124 (2013.01 - EP); C04B 2237/125 (2013.01 - EP); C04B 2237/366 (2013.01 - EP); C04B 2237/40 (2013.01 - EP); C04B 2237/708 (2013.01 - EP); C04B 2237/72 (2013.01 - EP); H05K 1/0306 (2013.01 - EP); H05K 3/38 (2013.01 - EP)

C-Set (source: EP)

  1. C04B 41/52 + C04B 41/4529 + C04B 41/5133
  2. C04B 41/52 + C04B 41/4529 + C04B 41/5144
  3. C04B 41/52 + C04B 41/5144
  4. C04B 41/009 + C04B 35/581

Citation (search report)

  • [Y] CH 418214 A 19660731 - VARIAN ASSOCIATES [US]
  • [A] PATENT ABSTRACTS OF JAPAN vol. 14, no. 304 (C - 734) 29 June 1990 (1990-06-29)
  • See references of WO 9323246A1

Designated contracting state (EPC)

AT BE CH DE DK ES FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 9323246 A1 19931125; CA 2134340 A1 19931125; EP 0640039 A1 19950301; EP 0640039 A4 19950419; JP H07507973 A 19950907; KR 950701575 A 19950428; MX 9302780 A 19931101

DOCDB simple family (application)

US 9304541 W 19930512; CA 2134340 A 19930512; EP 93913864 A 19930512; JP 50374094 A 19930512; KR 19940704051 A 19941112; MX 9302780 A 19930512