Global Patent Index - EP 0641027 A4

EP 0641027 A4 19951102 - SEMICONDUCTOR DEVICE.

Title (en)

SEMICONDUCTOR DEVICE.

Title (de)

HALBLEITERANORDNUNG.

Title (fr)

DISPOSITIF SEMICONDUCTEUR.

Publication

EP 0641027 A4 19951102 (EN)

Application

EP 93910326 A 19930512

Priority

  • JP 14633092 A 19920513
  • JP 9300621 W 19930512

Abstract (en)

[origin: WO9323878A1] It is an object of the present invention to provide a semiconductor device having a high current driving capability and capable of high-speed circuit operation. This device has a first semiconductor region of one conductivity type on a substrate; source and drain regions of the opposite conductivity type in the first region; a first insulating film on the substrate between the source and drain regions; and a conductive gate electrode on the first insulating film. The first insulating film comprises an insulator having a dielectric constant of 8 or more and its film thickness tI satisfies the following express (1). The source and drain regions are formed in a self-alignment manner with respect to the gate electrode: tI < 3 x ( epsilon r/ epsilon SiO2) (nm) (1) where epsilon r is the dielectric constant of the first insulating film, and epsilon SiO2 is the dielectric constant of the silicon oxide film.

IPC 1-7

H01L 29/772

IPC 8 full level

H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01)

CPC (source: EP US)

H01L 29/42364 (2013.01 - EP US); H01L 29/42368 (2013.01 - EP US); H01L 29/513 (2013.01 - EP US); H01L 29/517 (2013.01 - EP US)

Citation (search report)

  • [PX] US 5134451 A 19920728 - KATOH TERUO [JP] & PATENT ABSTRACTS OF JAPAN vol. 15, no. 36 (E - 1027) 29 January 1991 (1991-01-29)
  • [A] EP 0139764 A1 19850508 - MATSUSHITA ELECTRIC IND CO LTD [JP]
  • [X] PATENT ABSTRACTS OF JAPAN vol. 14, no. 528 (E - 1004) 20 November 1990 (1990-11-20)
  • [X] Y. W. HSUEH ET AL: "METAL-TiO2-SiO2-Si FIELD EFFECT TRANSISTOR", ELECTROCHEMICAL SOCIETY.;EXTENDED ABSTRACTS OF BATTERY DIVISION. FALL MEETING, NEW YORK, OCT. 13-17 1974. VOL. 74 PART 2 ABSTRACT NO. 207, US, PRINCETON, ELECTROCHEMICAL SOCIETY. 1974, pages 506 - 507
  • [A] PATENT ABSTRACTS OF JAPAN vol. 2, no. 45 (E - 024) 27 March 1978 (1978-03-27)
  • [A] PATENT ABSTRACTS OF JAPAN vol. 10, no. 263 (E - 435) 9 September 1986 (1986-09-09)

Designated contracting state (EPC)

DE GB NL

DOCDB simple family (publication)

WO 9323878 A1 19931125; EP 0641027 A1 19950301; EP 0641027 A4 19951102; JP H05315608 A 19931126; US 5528068 A 19960618

DOCDB simple family (application)

JP 9300621 W 19930512; EP 93910326 A 19930512; JP 14633092 A 19920513; US 33587194 A 19941110