EP 0645759 A3 19960522 - Magneto-resistance device, and magnetic head comprising such a device.
Title (en)
Magneto-resistance device, and magnetic head comprising such a device.
Title (de)
Magnetoresistive Einrichtung und eine solche Einrichtung enthaltender Magnetkopf.
Title (fr)
Dispositif magnéto-résistif et tête magnétique comportant un tel dispositif.
Publication
Application
Priority
- EP 94202670 A 19940916
- EP 93202759 A 19930924
Abstract (en)
[origin: EP0645759A2] A magneto-resistance device comprising a stacked structure, said stacked structure comprising a non-conducting substrate having a surface on which a multilayer structure is provided, the surface being furnished with a plurality of grooves which are substantially mutually parallel, each groove comprising a first face and a second face, all first faces being substantially planar and mutually parallel, the constituent layers of the multilayer structure being provided in a stack upon each said first face in such a manner as to be parallel thereto, the thickness of the stacks being such that each stack makes physical contact with each immediately neighbouring stack, the magneto-resistance effect of the multilayer structure being measurable by applying an electrical voltage gradient across the plane of the substrate in an in-plane direction substantially perpendicular to the grooves, thereby inducing a measurable flow of electrical current through the multilayer structure across the grooved surface of the substrate, the current thus flowing from one stack to the next in such a manner that, except in the vicinity of the region of electrical contact between immediately adjacent stacks, its direction is substantially perpendicular to the constituent layers of each stack. <IMAGE>
IPC 1-7
IPC 8 full level
G01R 33/09 (2006.01); G11B 5/39 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01)
CPC (source: EP KR US)
B82Y 10/00 (2013.01 - EP US); B82Y 25/00 (2013.01 - EP US); G01R 33/093 (2013.01 - EP US); G11B 5/39 (2013.01 - KR); G11B 5/3903 (2013.01 - EP US); G11B 5/3925 (2013.01 - EP US); H10N 50/10 (2023.02 - EP US); Y10S 428/928 (2013.01 - EP US); Y10T 428/12465 (2015.01 - EP US); Y10T 428/12472 (2015.01 - EP US); Y10T 428/12535 (2015.01 - EP US); Y10T 428/12993 (2015.01 - EP US)
Citation (search report)
- [E] EP 0616484 A1 19940921 - THOMSON CSF [FR]
- [X] DE 3229774 A1 19830324 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- [X] WO 9309541 A1 19930513 - NONVOLATILE ELECTRONICS INC [US]
- [XY] US 4591889 A 19860527 - GOSSARD ARTHUR C [US], et al
- [Y] US 5189367 A 19930223 - LEE MARK [US], et al
- [AD] M.A.M. GIJS ET AL.: "Perpendicular Giant Magnetoresistance of Microstructured Fe/Cr Magnetic Multilayers from 4.2 to 300 K", PHYS. REV. LETT., vol. 70, no. 21, US, pages 3343 - 3346
- [AP] M.A.M. GIJS ET AL.: "Perpendicular giant magnetoresistance of microstructures in Fe/Cr and Co/Cu multilayers", J. APPLIED PHYS., vol. 75, no. 10, US, pages 6709 - 6713, XP000458235, DOI: doi:10.1063/1.356847
- [XP] C.DUPAS ET AL.: "Oscillatory behaviour of the magnetoresistance versus Cu spacer thickness in UHV-grown Co/Cu(111) multilayers", JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 128, no. 3, NL, pages 361 - 364, XP000414692, DOI: doi:10.1016/0304-8853(93)90481-G
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0645759 A2 19950329; EP 0645759 A3 19960522; JP H07170002 A 19950704; KR 950009549 A 19950424; SG 44873 A1 19971219; TW 279977 B 19960701; US 5527626 A 19960618
DOCDB simple family (application)
EP 94202670 A 19940916; JP 22815094 A 19940922; KR 19940023554 A 19940916; SG 1996008943 A 19940916; TW 83103689 A 19940425; US 56224795 A 19951122