EP 0646960 B1 19991222 - Semiconductor device with a semiconductor element provided in a mesa structure
Title (en)
Semiconductor device with a semiconductor element provided in a mesa structure
Title (de)
Halbleiteranordnung mit einem Halbleiterelement ausgestaltet in einer Mesastruktur
Title (fr)
Dispositif semi-conducteur comprenant un élément semi-conducteur à structure mesa
Publication
Application
Priority
BE 9301029 A 19931001
Abstract (en)
[origin: EP0646960A1] The invention relates to a semiconductor device with a semiconductor body (1) comprising a semiconductor element with connection points (2, 3) which adjoins a surface (4) of the semiconductor body (1) and is laterally insulated and surrounded by a first depression (5) in the surface (4), which depression (5) is provided with a wall (6) and a bottom (7), while the surface (4) of the semiconductor body (1) and the wall (6) and bottom (7) of the depression (5) are covered with an insulating layer (8), the connection points (2, 3) being provided in the insulating layer (8) on the surface (4) of the semiconductor body (1) and being connected to conductor tracks (10, 11) which connect the connection points (2, 3) across a wall (6) to connection surfaces (12, 13) associated with the connection points (2, 3) and situated on the bottom (7). It is found in practice that, in the case of a progressive miniaturization, the manufacture of such devices leads to rejects caused by short-circuits between connection surfaces (12, 13). According to the invention, one or several further depressions (50) surrounded by the first depression (5) is/are present in the surfce 4 of the semiconductor body (1), while only one connection surface (12, 13) is present on the bottom (7, 57) of each of the first and further depressions (5, 50), which connection surface is connected to a connection point (2, 3) on the surface (4) of the semiconductor body (1) via a conductor track (10, 11). Short-circuits are found to take place in the known semiconductor devices on a wall (6) of the depression (5) when there are more than one conductor tracks (10, 11) on this wall (6). Thanks to the measure according to the invention, only one conductor track (10 or 11) is present on the wall (6, 56) of the depression (5, 50), so short-circuits with other conductor tracks on the wall (6, 56) cannot arise. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/41 (2006.01); H01L 21/331 (2006.01); H01L 21/60 (2006.01); H01L 23/482 (2006.01); H01L 29/73 (2006.01); H01L 29/732 (2006.01)
CPC (source: EP KR US)
H01L 21/60 (2021.08 - KR); H01L 23/482 (2013.01 - KR); H01L 23/4824 (2013.01 - EP US); H01L 24/05 (2013.01 - EP US); H01L 24/06 (2013.01 - EP US); H01L 29/0657 (2013.01 - EP US); H01L 29/7325 (2013.01 - EP US); H01L 24/45 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 2224/0401 (2013.01 - EP US); H01L 2224/04042 (2013.01 - EP US); H01L 2224/05552 (2013.01 - EP US); H01L 2224/05644 (2013.01 - EP US); H01L 2224/13144 (2013.01 - EP US); H01L 2224/45144 (2013.01 - EP US); H01L 2224/48245 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/48644 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01014 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/01032 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/10329 (2013.01 - EP US); H01L 2924/1301 (2013.01 - EP US); H01L 2924/1305 (2013.01 - EP US); H01L 2924/13064 (2013.01 - EP US); H01L 2924/3011 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
EP 0646960 A1 19950405; EP 0646960 B1 19991222; BE 1007589 A3 19950816; DE 69422252 D1 20000127; DE 69422252 T2 20000727; JP H07161762 A 19950623; KR 100313984 B1 20020406; KR 950012657 A 19950516; US 5569952 A 19961029
DOCDB simple family (application)
EP 94202803 A 19940928; BE 9301029 A 19931001; DE 69422252 T 19940928; JP 23351094 A 19940928; KR 19940024852 A 19940930; US 31630494 A 19940930