EP 0647354 A1 19950412 - PROCESS FOR MANUFACTURING AN ACTIVE MATRIX DISPLAY.
Title (en)
PROCESS FOR MANUFACTURING AN ACTIVE MATRIX DISPLAY.
Title (de)
HERSTELLUNGSVERFAHREN FÜR AKTIVMATRIX-BILDSCHIRM.
Title (fr)
PROCEDE DE FABRICATION D'UN AFFICHAGE A MATRICE ACTIVE.
Publication
Application
Priority
- DE 4310640 A 19930331
- US 9303854 W 19930426
Abstract (en)
[origin: DE4310640C1] The mfg. system for a Si:H thin-film transistors with storage capacitors uses 2 sputtered and structured chrome surfaces (11,12) applied to a substrate (10), respectively providing a row line nad a gate contact for each thin film transistor (19) and the base electrode of the storage capacitor. A gate isolator (13) and a Si:H intrinsic and doped semiconductor layers (14,15) are then applied, with wet or dry etching of the semiconductor layers via a metallisation mask. An indium-tin oxide is deposited and structured to form image print electrodes with a further metallisation for the matrix columns and etching of the metallisation mask using the indium-tin oxide as the mask. A transparent passivation layer is then applied. USE - For simplified mfr. of liquid crystal display screen.
IPC 1-7
IPC 8 full level
H01L 21/77 (2006.01); H01L 21/84 (2006.01)
CPC (source: EP US)
H01L 27/1214 (2013.01 - EP); H01L 27/1288 (2013.01 - EP US)
Designated contracting state (EPC)
FR GB NL
DOCDB simple family (publication)
DE 4310640 C1 19940511; EP 0647354 A1 19950412; EP 0647354 A4 19950830; WO 9423446 A1 19941013
DOCDB simple family (application)
DE 4310640 A 19930331; EP 93910769 A 19930426; US 9303854 W 19930426