EP 0653106 A1 19950517 - INDIUM ANTIMONIDE (InSb) PHOTODETECTOR DEVICE AND STRUCTURE FOR INFRARED, VISIBLE AND ULTRAVIOLET RADIATION.
Title (en)
INDIUM ANTIMONIDE (InSb) PHOTODETECTOR DEVICE AND STRUCTURE FOR INFRARED, VISIBLE AND ULTRAVIOLET RADIATION.
Title (de)
INSB-PHOTODETEKTOR UND STRUKTUR FÜR INFRAROT-, LICHT UND ULTRAVIOLETTSTRAHLUNG.
Title (fr)
DISPOSITIF ET STRUCTURE PHOTODETECTEURS A L'ANTIMONIURE D'INDIUM (InSb) POUR LES RAYONNENENTS INFRAROUGE, VISIBLE ET ULTRAVIOLET.
Publication
Application
Priority
- US 9406038 W 19940527
- US 6889793 A 19930528
Abstract (en)
[origin: WO9428587A1] The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.
IPC 1-7
IPC 8 full level
H01L 31/0264 (2006.01); H01L 31/0216 (2014.01); H01L 31/0304 (2006.01); H01L 31/103 (2006.01)
CPC (source: EP)
H01L 31/02161 (2013.01); H01L 31/0304 (2013.01); H01L 31/1035 (2013.01)
Citation (search report)
See references of WO 9428587A1
Designated contracting state (EPC)
FR GB
DOCDB simple family (publication)
WO 9428587 A1 19941208; CA 2141034 A1 19941208; CA 2141034 C 19990727; EP 0653106 A1 19950517; JP 2998994 B2 20000117; JP H08500940 A 19960130
DOCDB simple family (application)
US 9406038 W 19940527; CA 2141034 A 19940527; EP 94919282 A 19940527; JP 50099894 A 19940527