EP 0657066 A1 19950614 - FIELD-EFFECT-CONTROLLED SEMICONDUCTOR COMPONENT.
Title (en)
FIELD-EFFECT-CONTROLLED SEMICONDUCTOR COMPONENT.
Title (de)
FELDEFFEKTGESTEUERTES HALBLEITERBAUELEMENT.
Title (fr)
COMPOSANT A SEMICONDUCTEUR A COMMANDE PAR EFFET DE CHAMP.
Publication
Application
Priority
- DE 4228832 A 19920829
- EP 9302216 W 19930819
Abstract (en)
[origin: DE4228832A1] The invention concerns a field-effect-controlled semiconductor component with at least four zones of alternating opposite conduction types, an emitter region at the anode end, a first and a second base region adjacent to the emitter region, an emitter region at the cathode end and an additional adjacent emitter region, plus an anode contact, a contact with the emitter region at the cathode end and a MOS field-effect transistor control-electrode contact. The cathode-end emitter region and the adjacent emitter region form the source and drain of a MOS field-effect transistor. The part (34, 36) of the cathode-end base region which is adjacent to the emitter region (44) of a main thyristor, or a separate highly p-doped region (38) adjacent to the cathode-end base region, is connected to the cathode contact (72) by an integrated component (D) with a non-linear current/voltage characteristic.
IPC 1-7
IPC 8 full level
H01L 29/10 (2006.01); H01L 29/74 (2006.01); H01L 29/745 (2006.01); H01L 29/749 (2006.01)
CPC (source: EP US)
H01L 29/102 (2013.01 - EP US); H01L 29/7412 (2013.01 - EP US); H01L 29/7428 (2013.01 - EP US); H01L 29/7455 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IE NL SE
DOCDB simple family (publication)
DE 4228832 A1 19940310; DE 4228832 C2 19941124; EP 0657066 A1 19950614; JP H08502858 A 19960326; US 5587595 A 19961224; WO 9406158 A1 19940317
DOCDB simple family (application)
DE 4228832 A 19920829; EP 9302216 W 19930819; EP 93919100 A 19930819; JP 50680294 A 19930819; US 38777895 A 19950221