Global Patent Index - EP 0662223 A1

EP 0662223 A1 19950712 - PHOTORESIST STRIPPING PROCESS USING N,N-DIMETHYL-BIS(2-HYDROXYETHYL) QUATERNARY AMMONIUM HYDROXIDE.

Title (en)

PHOTORESIST STRIPPING PROCESS USING N,N-DIMETHYL-BIS(2-HYDROXYETHYL) QUATERNARY AMMONIUM HYDROXIDE.

Title (de)

PHOTOLACKENTSCHICHTUNGSVERFAHREN MITTELS N,N-DIMETHYL-BIS (2-HYDROXYETHYL) QUATERNAEREN AMMONIUM HYDROXIOL.

Title (fr)

PROCEDE D'ELIMINATION D'AGENTS PHOTORESISTANTS EMPLOYANT DU M,M-DIMETHYLE-BIS(2-HYDROXYETHYLE) HYDROXYDE D'AMMONIUM QUATERNAIRE.

Publication

EP 0662223 A1 19950712 (EN)

Application

EP 93921680 A 19930923

Priority

  • US 9308852 W 19930923
  • US 95211292 A 19920928

Abstract (en)

[origin: WO9408276A1] A process for stripping photo-resists and an aqueous bath for use in the process are disclosed. The process is carried out at 40 to 100 C for about 0.1 to 10 minutes. The aqueous bath contains 1 to 10 weight percent N,N-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide and preferably 0.5 to 10 weight percent of a metal complexing agent such as monoethanol amine, ethylene diamine, ethylene diamine tetraacetic, melamine, nitrillotriacetic acid, morpholine, acetonylacetone, and preferably from 0.1 to 5 weight percent ammonia.

IPC 1-7

G03F 7/42

IPC 8 full level

G03F 7/42 (2006.01); H01L 21/027 (2006.01)

CPC (source: EP)

G03F 7/425 (2013.01)

Citation (search report)

See references of WO 9408276A1

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

WO 9408276 A1 19940414; AU 4929993 A 19940426; EP 0662223 A1 19950712; JP H08502367 A 19960312

DOCDB simple family (application)

US 9308852 W 19930923; AU 4929993 A 19930923; EP 93921680 A 19930923; JP 50911294 A 19930923