EP 0668539 A3 19951122 - Thinfilm materials for the preparation of attenuating phase shift masks.
Title (en)
Thinfilm materials for the preparation of attenuating phase shift masks.
Title (de)
Dünnschichtmaterialien zur Herstellung von dämpfenden Phasenverschiebungsmasken.
Title (fr)
Matériaux pour couches minces pour fabriquer des masques à décalage de phase atténuant.
Publication
Application
Priority
US 20011794 A 19940222
Abstract (en)
[origin: EP0668539A2] The fabrication of transmissive attenuating types of phase shift masks by formation of and selective etch of a layer, deposited on a substrate. This single layer provides both the phase shift and the attenuation required and is readily patterned and processed to produce attenuating phase shift masks. <IMAGE>
IPC 1-7
IPC 8 full level
C23C 14/06 (2006.01); G03F 1/00 (2006.01); G03F 1/08 (2006.01); G03F 1/26 (2012.01); G03F 1/32 (2012.01); G03F 9/00 (2006.01); H01L 21/027 (2006.01)
CPC (source: EP KR US)
G03F 1/26 (2013.01 - EP KR US); G03F 1/32 (2013.01 - EP KR US)
Citation (search report)
- [PX] WO 9411786 A1 19940526 - DU PONT [US]
- [A] US 5230971 A 19930727 - ALPAY HAKKI U [US]
- [L] DE 4339481 A1 19940526 - ULVAC COATING CORP [JP], et al
- [X] ANONYMOUS: "Si-N Attenuated Phase Shift Layer for Phase Shift Mask Application.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 35, no. 3, NEW YORK, US, pages 440 - 441
- [X] K.K. SHIH ET AL.: "Thin Film Materials for the Preparation of Attenuating Phase Shift Masks", JOURNAL OF VAC. SCI. & TECHN. B, vol. 12, no. 1, pages 32 - 36, XP000429019
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0668539 A2 19950823; EP 0668539 A3 19951122; JP 2878143 B2 19990405; JP H07261370 A 19951013; KR 100213151 B1 19990802; KR 950025482 A 19950915; US 2001051302 A1 20011213; US 5939225 A 19990817; US 6503664 B2 20030107
DOCDB simple family (application)
EP 95710009 A 19950217; JP 2403795 A 19950213; KR 19950003502 A 19950220; US 28922799 A 19990409; US 69381596 A 19960715