EP 0670591 A2 19950906 - Method for chemical mechanical polishing a semiconductor device using slurry.
Title (en)
Method for chemical mechanical polishing a semiconductor device using slurry.
Title (de)
Verfahren zum mechanisch-chemischen Polieren von Halbleiteranordnungen mit einem Suspension.
Title (fr)
Procédé de polissage mécano-chimique d'un composant semi-conducteur à l'aide d'une suspension.
Publication
Application
Priority
US 20542394 A 19940304
Abstract (en)
Conductive plugs (28) are formed in a semiconductor device (10) using a chemical mechanical polishing (CMP) process. A blanket conductive layer (26), for example of tungsten, is deposited in a plug opening (24). The conductive layer is polished back by CMP using a slurry comprised of either copper sulfate (CuSO4) or copper perchlorate [Cu(ClO4)2] and an abrasive, such as alumina or silica, and water. In another embodiment, a CMP process using such slurries may be used to form conductive interconnects (50) in a semiconductor device (40). <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/304 (2006.01); B24B 37/00 (2006.01); C09K 13/04 (2006.01); C23F 1/00 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR US)
H01L 21/304 (2013.01 - KR); H01L 21/3212 (2013.01 - EP US)
Citation (applicant)
- J. ELECTROCHEMICAL SOC., vol. 138, no. 11, pages 3460 - 3465
- SOLID STATE TECHNOLOGY, vol. 10, no. 8, pages 27 - 39
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0670591 A2 19950906; EP 0670591 A3 19951227; JP H07288244 A 19951031; KR 950034564 A 19951228; TW 258822 B 19951001; US 6027997 A 20000222
DOCDB simple family (application)
EP 95102959 A 19950302; JP 6864395 A 19950302; KR 19950003510 A 19950223; TW 84100076 A 19950106; US 20542394 A 19940304