EP 0676088 A1 19951011 - NON-VOLATILE SEMICONDUCTOR MEMORY CELL.
Title (en)
NON-VOLATILE SEMICONDUCTOR MEMORY CELL.
Title (de)
NICHTFLÜCHTIGE HALBLEITER-SPEICHERZELLE.
Title (fr)
CELLULE DE MEMOIRE A SEMICONDUCTEUR REMANENTE.
Publication
Application
Priority
- US 9312485 W 19931220
- US 99723692 A 19921228
- US 99960992 A 19921231
- US 2425893 A 19930301
- US 6223793 A 19930517
Abstract (en)
[origin: WO9415363A1] A non-volatile memory cell (2) including a floating gate (16) dielectrically disposed between a first control gate (12) and a second control gate (14). Addressing of the memory cell (2) for programming, de-programming and reading involves the simultaneous energization of both the control gates (12 and 14). The energization of only one control gate, but not both, can not activate the memory cell (2). A memory cell array comprising the memory cells of the present invention can be arranged in a matrix format. Addressing of each of the memory cell (2) in the array is simply the simultaneous energization of a pair of control gates (12 and 14) perpendicularly criss-crossing the underlying memory cell. Further modifications in the design of the memory cell (2) enable the memory cell to be programmed with negative threshold voltages, thereby relaxing the manufacturing tolerances, and consequently reduces the production cost.
IPC 1-7
IPC 8 full level
G11C 16/04 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP)
G11C 16/0425 (2013.01); G11C 16/0433 (2013.01); H01L 29/42328 (2013.01); H01L 29/7883 (2013.01); H01L 29/7885 (2013.01); H10B 41/00 (2023.02); H10B 69/00 (2023.02)
Designated contracting state (EPC)
AT BE CH DE DK ES FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 9415363 A1 19940707; EP 0676088 A1 19951011; EP 0676088 A4 19950818; JP 2749449 B2 19980513; JP H07509813 A 19951026
DOCDB simple family (application)
US 9312485 W 19931220; EP 94907098 A 19931220; JP 51541494 A 19931220