EP 0683921 B1 20040616 - MICROSTRUCTURES AND SINGLE MASK, SINGLE-CRYSTAL PROCESS FOR FABRICATION THEREOF
Title (en)
MICROSTRUCTURES AND SINGLE MASK, SINGLE-CRYSTAL PROCESS FOR FABRICATION THEREOF
Title (de)
MIKROSTRUKTUREN UND EINZELMASK, EINKRISTALL-HERSTELLUNGSVERFAHREN
Title (fr)
MICROSTRUCTURES ET PROCEDE A MASQUE UNIQUE UTILISANT DES MONOCRISTAUX POUR LEUR FABRICATION
Publication
Application
Priority
- US 9311584 W 19931203
- US 1331993 A 19930204
Abstract (en)
[origin: US6051866A] A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
IPC 1-7
H01L 21/44; H01L 21/449; H01L 21/302; H01L 23/48; H01L 29/06; H01L 29/86; H01L 29/84; H01L 29/96
IPC 8 full level
C23F 4/00 (2006.01); B81B 3/00 (2006.01); G01P 15/08 (2006.01); G01P 15/125 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 29/82 (2006.01); H01L 29/84 (2006.01)
CPC (source: EP US)
B81C 1/00142 (2013.01 - EP US); B81C 1/0015 (2013.01 - EP US); B81C 1/00619 (2013.01 - EP US); B81C 1/00626 (2013.01 - EP US); G01P 15/0802 (2013.01 - EP US); G01P 15/125 (2013.01 - EP US); B81C 2201/0112 (2013.01 - EP US); B81C 2201/0132 (2013.01 - EP US); B81C 2201/053 (2013.01 - EP US); G01P 2015/0814 (2013.01 - EP US); G01P 2015/0817 (2013.01 - EP US); G01P 2015/0828 (2013.01 - EP US); Y10S 73/01 (2013.01 - EP US); Y10S 148/05 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH DE DK ES FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
US 5719073 A 19980217; AT E269588 T1 20040715; CA 2154357 A1 19940818; CA 2154357 C 20040302; DE 69333551 D1 20040722; DE 69333551 T2 20050623; EP 0683921 A1 19951129; EP 0683921 A4 19970102; EP 0683921 B1 20040616; JP 3896158 B2 20070322; JP H08506857 A 19960723; US 5846849 A 19981208; US 5847454 A 19981208; US 6051866 A 20000418; WO 9418697 A1 19940818
DOCDB simple family (application)
US 31279794 A 19940927; AT 94903348 T 19931203; CA 2154357 A 19931203; DE 69333551 T 19931203; EP 94903348 A 19931203; JP 51801194 A 19931203; US 13225498 A 19980811; US 31033694 A 19940922; US 80482697 A 19970224; US 9311584 W 19931203