EP 0684632 A3 19980415 - Method of forming a film at low temperature for a semiconductor device.
Title (en)
Method of forming a film at low temperature for a semiconductor device.
Title (de)
Verfahren zur Herstellung eines Films für eine Halbleiteranordnung bei niedriger Temperatur.
Title (fr)
Procédé de fabrication d'un film à basse température pour un dispositif semi-conducteur.
Publication
Application
Priority
JP 10086094 A 19940516
Abstract (en)
[origin: EP0684632A2] A P-type impurity layer, a silicon monocrystal film, a silicon oxide film and a crystal silicon film are successively formed on a semiconductor substrate by introducing appropriate functional gases on the semiconductor substrate, while irradiating the semiconductor substrate with ionizing radiation or light at a temperature lower than 250 DEG C. After forming a photoresist on the crystal silicon film at a temperature lower than 250 DEG C, the resultant semiconductor substrate is subjected to etching by using the photoresist as a mask, so as to form a gate electrode B out of the silicon oxide film and a gate insulating film out of the silicon oxide film. Then, the resultant semiconductor substrate is subjected to etching again by using the gate electrode as a mask, so as to form a channel region out of the P-type impurity layer. A source electrode and a drain electrode are formed on the respective sides of the gate electrode on the semiconductor substrate by introducing an appropriate functional gas, while irradiating the semiconductor substrate with ionizing radiation or light at a temperature lower than 250 DEG C. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/205 (2006.01); C23C 16/48 (2006.01); H01L 21/203 (2006.01); H01L 21/22 (2006.01); H01L 21/285 (2006.01); H01L 21/316 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP KR US)
C23C 16/48 (2013.01 - EP US); C23C 16/482 (2013.01 - EP US); C23C 16/484 (2013.01 - EP US); C23C 16/485 (2013.01 - EP US); C23C 16/486 (2013.01 - EP US); C23C 16/487 (2013.01 - EP US); H01L 21/02167 (2013.01 - EP US); H01L 21/0217 (2013.01 - EP US); H01L 21/02211 (2013.01 - EP US); H01L 21/02227 (2013.01 - EP US); H01L 21/02238 (2013.01 - EP US); H01L 21/02247 (2013.01 - EP US); H01L 21/02252 (2013.01 - EP US); H01L 21/02277 (2013.01 - EP US); H01L 21/02381 (2013.01 - EP US); H01L 21/02532 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 21/02639 (2013.01 - EP US); H01L 21/28512 (2013.01 - EP US); H01L 21/28525 (2013.01 - EP US); H01L 21/28556 (2013.01 - EP US); H01L 21/31 (2013.01 - KR); H01L 21/31608 (2016.02 - US)
Citation (search report)
- [AX] US 4509451 A 19850409 - COLLINS GEORGE J [US], et al
- [AX] EP 0247714 A2 19871202 - SEIKO INSTR INC [JP]
- [A] EP 0194109 A2 19860910 - TOSHIBA KK [JP]
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
EP 0684632 A2 19951129; EP 0684632 A3 19980415; EP 0684632 B1 20071212; CN 1088911 C 20020807; CN 1121260 A 19960424; DE 69535661 D1 20080124; DE 69535661 T2 20080521; JP 2771472 B2 19980702; JP H0837159 A 19960206; KR 0175430 B1 19990401; KR 950034591 A 19951228; US 5817559 A 19981006; US 6169004 B1 20010102
DOCDB simple family (application)
EP 95107485 A 19950516; CN 95106027 A 19950515; DE 69535661 T 19950516; JP 10509995 A 19950428; KR 19950011278 A 19950509; US 44097995 A 19950515; US 9378798 A 19980609