Global Patent Index - EP 0684638 A3

EP 0684638 A3 19961016 - Method for inducing damage to wafers.

Title (en)

Method for inducing damage to wafers.

Title (de)

Verfahren zur Erzeugung von Störstellen auf Plättchen.

Title (fr)

Méthode pour la création de défauts sur des plaquettes.

Publication

EP 0684638 A3 19961016 (EN)

Application

EP 95303124 A 19950509

Priority

JP 10936094 A 19940524

Abstract (en)

[origin: EP0684638A2] A method of inducing damage for gettering to the rear surface of a single crystal silicon wafer (70) comprises polishing the rear surface, which can provide a good gettering effect to the wafer (70) and can also depress dusting characteristics of the rear surface of the wafer (70). The method comprises the steps of: moving the wafer (70) and an abrasive cloth (6) relatively, and supplying an abrasive liquid (9) having a pH in the range of 4 to 9 which contains silica particles having an average diameter in the range of 0.1 to 10 mu m as abrasive grains, between the wafer (70) and the abrasive cloth (6). <IMAGE>

IPC 1-7

H01L 21/322; H01L 21/306; H01L 21/00; B24B 7/22; C09G 1/02

IPC 8 full level

B24B 37/04 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/322 (2006.01)

CPC (source: EP US)

B24B 37/042 (2013.01 - EP US); H01L 21/02024 (2013.01 - EP US); H01L 21/3221 (2013.01 - EP US)

Citation (search report)

  • [Y] US 4144099 A 19790313 - EDMONDS HAROLD D, et al
  • [A] US 5223734 A 19930629 - LOWREY TYLER A [US], et al
  • [A] DD 253706 A1 19880127 - SPURENMETALLE FREIBERG VEB KOM [DD]
  • [Y] PATENT ABSTRACTS OF JAPAN vol. 006, no. 021 (E - 093) 6 February 1982 (1982-02-06)
  • [A] SUGIMOTO F ET AL: "A pH controlled chemical mechanical polishing method for ultra-thin bonded SOI wafer", 1993 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS (IEEE CAT. NO.93CH 3303-5), PROCEEDINGS OF IEEE VLSI TECHNOLOGY SYMPOSIUM, KYOTO, JAPAN, 17-19 MAY 1993, 1993, TOKYO, JAPAN, BUS. CENTER FOR ACAD. SOC. JAPAN, JAPAN, pages 113 - 114, XP000462930

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0684638 A2 19951129; EP 0684638 A3 19961016; JP 2719113 B2 19980225; JP H07321119 A 19951208; US 5759087 A 19980602

DOCDB simple family (application)

EP 95303124 A 19950509; JP 10936094 A 19940524; US 43565695 A 19950505