Global Patent Index - EP 0684639 A1

EP 0684639 A1 19951129 - Method of manufacturing a bipolar transistor.

Title (en)

Method of manufacturing a bipolar transistor.

Title (de)

Verfahren zur Herstellung eines Bipolartransistors.

Title (fr)

Procédé de fabrication d'un transistor bipolaire.

Publication

EP 0684639 A1 19951129 (DE)

Application

EP 95106710 A 19950504

Priority

DE 4417916 A 19940524

Abstract (en)

The method involves forming a structured layer with a collector zone and a surrounding insulation region above a monocrystalline base layer. The layer is then subjected to differential epitaxy, to provide a monocrystalline transistor structure above the collector zone and a polycrystalline layer structure above the insulation region. The polycrystalline layer structure acts as a base lead. Pref. selective insulation regions are formed by localised oxidation of the semiconductor material of the collector layer, or by etching the collector layer to form channels which are then filled with an insulating material.

Abstract (de)

Es wird ein Verfahren zur Herstellung eines Bipolartransistors für höchste Frequenzen angegeben, welches insbesondere für die Herstellung von Hetero-Bipolartransistoren von Vorteil ist und Bauelemente mit geringen parasitären Kapazitäten und geringem Basiszuleitungswiderstand ergibt.

IPC 1-7

H01L 21/331; H01L 29/737

IPC 8 full level

H01L 29/73 (2006.01); H01L 21/20 (2006.01); H01L 21/331 (2006.01); H01L 29/737 (2006.01)

CPC (source: EP US)

H01L 29/66242 (2013.01 - EP US); H01L 29/7378 (2013.01 - EP US); Y10S 148/011 (2013.01 - EP); Y10S 148/072 (2013.01 - EP); Y10S 148/117 (2013.01 - EP)

Citation (applicant)

Citation (search report)

  • [X] EP 0430279 A2 19910605 - HEWLETT PACKARD CO [US]
  • [X] EP 0375965 A1 19900704 - FUJITSU LTD [JP]
  • [A] DE 4102888 A1 19910801 - TOSHIBA KAWASAKI KK [JP]
  • [X] BURGHARTZ J N ET AL: "APCVD-grown self-aligned SiGe-base HBTs", PROCEEDINGS OF THE 1993 BIPOLAR/BICOMS CIRCUITS AND TECHNOLOGY MEETING (CAT. NO.93CH3315-9), PROCEEDINGS OF IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, MINNEAPOLIS, MN, USA, 4-5 OCT. 1993, ISBN 0-7803-1316-X, 1993, NEW YORK, NY, USA, IEEE, USA, pages 55 - 62

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

EP 0684639 A1 19951129; DE 4417916 A1 19951130; JP H0864615 A 19960308; US 5587327 A 19961224

DOCDB simple family (application)

EP 95106710 A 19950504; DE 4417916 A 19940524; JP 12385995 A 19950523; US 44794795 A 19950523