Global Patent Index - EP 0685114 A1

EP 0685114 A1 19951206 - FILLING OF VIAS AND CONTACTS EMPLOYING AN ALUMINUM-GERMANIUM ALLOY.

Title (en)

FILLING OF VIAS AND CONTACTS EMPLOYING AN ALUMINUM-GERMANIUM ALLOY.

Title (de)

AUFFUELLUNG VON KONTAKTEN UND DURCHFUEHRUNGEN UNTER VERWENDUNG VON ALUMINIUM-GERMANIUM LEGIERUNG.

Title (fr)

REMPLISSAGE DE TRAVERSEES ET DE CONTACTS AU MOYEN D'UN ALLIAGE D'ALUMINIUM ET DE GERMANIUM.

Publication

EP 0685114 A1 19951206 (EN)

Application

EP 94906060 A 19940110

Priority

  • US 9400309 W 19940110
  • US 1876993 A 19930217

Abstract (en)

[origin: WO9419826A1] A multi-step method of filling submicron vias with aluminum includes an initial deposition of about 1000 angstroms of aluminum which is sputter deposited at a temperature of about 150 DEG C. Subsequently, a layer of an aluminum germanium alloy is deposited, again about 1000 angstroms at 150 DEG C or less. A third layer of aluminum without germanium is deposited at a temperature of about 150 DEG C. Approximately 1000 angstroms is deposited. This is followed by a final aluminum deposition which is conducted at 450 DEG to 500 DEG C to deposit 5000 to 15,000 angstroms of aluminum in total. The two depositions of aluminum, at the relatively low temperature of 150 DEG C, prevents the germanium from precipitating and also permits the germanium to diffuse into these layers which increases the overall melting temperature of the deposited metal so that at subsequent higher treatment temperatures, the metal does not dewet the via surface.

IPC 1-7

H01L 21/768; H01L 23/485

IPC 8 full level

H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)

CPC (source: EP KR US)

H01L 21/768 (2013.01 - KR); H01L 21/76877 (2013.01 - EP US); H01L 23/532 (2013.01 - US); H01L 23/53219 (2013.01 - EP); H01L 2924/0002 (2013.01 - EP US)

Citation (search report)

See references of WO 9419826A1

Citation (examination)

  • PATENT ABSTRACTS OF JAPAN vol. 16, no. 526 (E-1286)28 October 1992 & JP,A,04
  • 196 526 (NEC CORP.) 16 July 1992

Designated contracting state (EPC)

BE CH DE FR GB IT LI LU NL SE

DOCDB simple family (publication)

WO 9419826 A1 19940901; AU 5993994 A 19940914; CA 2153680 A1 19940901; EP 0685114 A1 19951206; JP H08506935 A 19960723; KR 960701467 A 19960224; TW 243535 B 19950321; US 5358616 A 19941025

DOCDB simple family (application)

US 9400309 W 19940110; AU 5993994 A 19940110; CA 2153680 A 19940110; EP 94906060 A 19940110; JP 51895494 A 19940110; KR 19950703443 A 19950817; TW 83100204 A 19940112; US 1876993 A 19930217