Global Patent Index - EP 0685873 A1

EP 0685873 A1 19951206 - Inductively coupled plasma reactor with an electrode for enhancing plasma ignition.

Title (en)

Inductively coupled plasma reactor with an electrode for enhancing plasma ignition.

Title (de)

Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung.

Title (fr)

Réacteur à plasma à couplage inductif avec une électrode pour faciliter la création du plasma.

Publication

EP 0685873 A1 19951206 (EN)

Application

EP 95108347 A 19950531

Priority

US 25296394 A 19940602

Abstract (en)

A plasma reactor for carrying out plasma processing of a semiconductor substrate (130) includes a vacuum chamber (100, 110) including apparatus (170) for introducing a gas into the interior thereof, an induction coil (140) encircling a region of the vacuum chamber (100, 110), the coil (140) being connected across an RF power source (150), and an electrode (180) positioned adjacent the region and connected to the RF power source (150) for capacitively coupling RF power to the gas in the interior of the vacuum chamber. The electrode (180) has a surface area facing the region which is large enough to provide capacitive coupling of RF power to the gas in the region sufficient to facilitate igniting a plasma, but which is small enough so that, during steady-state maintenance of the plasma, most of the RF power coupled to the plasma from the RF power source (150) is coupled inductively rather than capacitively. <IMAGE>

IPC 1-7

H01J 37/32; H05H 1/46

IPC 8 full level

C23C 16/50 (2006.01); C23F 4/00 (2006.01); H01J 37/32 (2006.01); H01L 21/205 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H05H 1/46 (2006.01)

CPC (source: EP KR US)

H01J 37/32091 (2013.01 - EP US); H01J 37/321 (2013.01 - EP US); H01L 21/3065 (2013.01 - KR); H05H 1/46 (2013.01 - EP US)

Citation (applicant)

US 4918031 A 19900417 - FLAMM DANIEL L [US], et al

Citation (search report)

Designated contracting state (EPC)

BE DE ES FR GB IT NL

DOCDB simple family (publication)

US 5685941 A 19971111; DE 69506619 D1 19990128; DE 69506619 T2 19990715; EP 0685873 A1 19951206; EP 0685873 B1 19981216; JP H0883697 A 19960326; KR 100328135 B1 20020814; KR 960002626 A 19960126

DOCDB simple family (application)

US 56114495 A 19951121; DE 69506619 T 19950531; EP 95108347 A 19950531; JP 13683195 A 19950602; KR 19950014881 A 19950602