EP 0701309 B1 20011219 - Semiconductor laser diode
Title (en)
Semiconductor laser diode
Title (de)
Halbleiterlaserdiode
Title (fr)
Laser à diode à semi-conducteur
Publication
Application
Priority
JP 21009794 A 19940902
Abstract (en)
[origin: EP0701309A2] A semiconductor laser diode which can be applied to optical fiber amplifiers to attain a high reliability and can generate light having a wavelength of about 1 mu m is provided. This semiconductor laser diode is formed on a GaAs substrate and has an active layer comprising a GaInAsP strained quantum well whose energy band gap is smaller than that of GaAs. Barrier layers each comprising GaInAsP whose band gap is greater than that of the active layer are bonded to the active layer through heterojunction. According to this structure, when the active layer and the barrier layers are grown, the amounts of supply of a Ga material and an In material can be controlled in a simple manner and a semiconductor laser diode having a high reliability can be realized. <MATH>
IPC 1-7
IPC 8 full level
B82Y 20/00 (2011.01); H01L 33/00 (2006.01); H01S 5/00 (2006.01); H01S 5/16 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01); H01S 5/223 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01)
CPC (source: EP US)
B82Y 20/00 (2013.01 - EP US); H01S 5/164 (2013.01 - EP US); H01S 5/343 (2013.01 - EP US); H01S 5/34313 (2013.01 - EP US); H01S 5/2009 (2013.01 - EP US); H01S 5/2231 (2013.01 - EP US); H01S 5/3211 (2013.01 - EP US); H01S 5/3406 (2013.01 - EP US); H01S 2302/00 (2013.01 - EP US); H01S 2304/02 (2013.01 - EP US); H01S 2304/04 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0701309 A2 19960313; EP 0701309 A3 19960508; EP 0701309 B1 20011219; DE 69524693 D1 20020131; DE 69524693 T2 20020718; JP H0878771 A 19960322; US 5734671 A 19980331
DOCDB simple family (application)
EP 95113765 A 19950901; DE 69524693 T 19950901; JP 21009794 A 19940902; US 52295995 A 19950901