EP 0702388 A1 19960320 - Slow-wave circuit assembly for traveling-wave tube and method of manufacturing a slow-wave circuit assembly
Title (en)
Slow-wave circuit assembly for traveling-wave tube and method of manufacturing a slow-wave circuit assembly
Title (de)
Eine Verzögerungsleitung enthaltende Schaltungsanordnung für eine Wanderfeldröhre und Verfahren zum Herstellen einer, eine Verzögerungsleitung enthaltenden Schaltungsanordnung
Title (fr)
Arrangement d'un circuit à ligne à retard pour tube à onde progressive et procédé de fabrication d'un arrangement d'un circuit à ligne à retard
Publication
Application
Priority
- JP 19296294 A 19940817
- JP 12997795 A 19950529
Abstract (en)
In a slow-wave circuit assembly for a traveling-wave tube according to this invention, an element different from the base material of dielectric support rods (12) for supporting a slow-wave line is implanted into the base material surface of each support rod (12) to a predetermined depth at a predetermined concentration, and the electrical resistance of the surface is lower than the electrical resistance of the base material itself. In addition, the slow-wave circuit assembly for the traveling-wave tube is manufactured such that the element is ion-implanted into the surface of the dielectric support rod (12) to a predetermined depth at a predetermined dose, and then the dielectric support rod (12) is subjected to annealing in a non-oxidizing atmosphere. Therefore, in the slow-wave circuit assembly for the traveling-wave tube, the dielectric support rod (12) is suppressed from being charged in a long-time operation. The manufacturing method is good in reproducibility and assembling properties. <IMAGE>
IPC 1-7
IPC 8 full level
H01J 9/14 (2006.01); H01J 23/16 (2006.01); H01J 23/24 (2006.01); H01J 23/26 (2006.01)
CPC (source: EP)
H01J 23/165 (2013.01); H01J 23/24 (2013.01); H01J 2223/26 (2013.01)
Citation (applicant)
- US 5038076 A 19910806 - SMITH BURTON H [US], et al
- US 5071055 A 19911210 - GRAULEAU DIDIER [FR], et al
- DE 3235753 A1 19840329 - SIEMENS AG [DE]
- JP H0589788 A 19930409 - NEC CORP
Citation (search report)
- [DYA] FR 2646732 A1 19901109 - RAYTHEON CO [US]
- [DA] DE 3235753 A1 19840329 - SIEMENS AG [DE]
- [XAY] PATENT ABSTRACTS OF JAPAN vol. 015, no. 209 (E - 1072) 28 May 1991 (1991-05-28)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0702388 A1 19960320; EP 0702388 B1 20020227; DE 69525582 D1 20020404; DE 69525582 T2 20021010; JP H08111182 A 19960430
DOCDB simple family (application)
EP 95112960 A 19950817; DE 69525582 T 19950817; JP 12997795 A 19950529