EP 0708473 A1 19960424 - Manufacturing method for micropoint electron source
Title (en)
Manufacturing method for micropoint electron source
Title (de)
Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle
Title (fr)
Procédé de fabrication d'une source d'électrons à micropointes
Publication
Application
Priority
FR 9412467 A 19941019
Abstract (en)
The electron source mfg. procedure involves creating an insulating substrate (32) on which there is at least one cathodic conductor (34). This is covered by an amorphous doped silicon layer (36), an insulating layer (38) and a grid layer (40). A set of holes is formed through the grid layer and the insulating layer. A sacrificial layer (44) is formed on the grid layer by a method of chemical vapour deposition to form an electrolytic deposit. An electron emitting layer (52) is then formed on the assembly and the sacrificial layer is then eliminated by electrolysis, leaving micro-point electron sources (54). The sacrificial layer is chosen from the group of metals including Cr, Fe, Ni, Co, Cd, Cu, Au, Ag and may for example be an alloy of nickel and iron.
Abstract (fr)
Selon ce procédé, on fabrique une structure comprenant un substrat isolant (32), au moins un conducteur cathodique (34), une couche isolante (36), une couche de grille (40), on forme des trous (42) à travers la couche de grille et la couche isolante, on forme sur la couche de grille, par une méthode de dépôt chimique humide, une couche sacrificielle (44), on dépose sur l'ensemble une couche d'un matériau émetteur d'électrons (52) et on élimine la couche sacrificielle. Application à la fabrication d'écrans plats. <IMAGE>
IPC 1-7
IPC 8 full level
C25F 3/02 (2006.01); H01J 1/304 (2006.01); H01J 9/02 (2006.01)
CPC (source: EP US)
H01J 9/025 (2013.01 - EP US)
Citation (applicant)
- FR 2593953 A1 19870807 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
- FR 2623013 A1 19890512 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
- FR 2663462 A1 19911220 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
- FR 2687839 A1 19930827 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
Citation (search report)
- [A] US 4964946 A 19901023 - GRAY HENRY F [US], et al
- [A] DE 3340777 A1 19850523 - MASCHF AUGSBURG NUERNBERG AG [DE]
- [AD] EP 0234989 A1 19870902 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
- [A] EP 0364964 A2 19900425 - MATSUSHITA ELECTRIC IND CO LTD [JP]
Designated contracting state (EPC)
DE GB IT
DOCDB simple family (publication)
EP 0708473 A1 19960424; EP 0708473 B1 19990120; DE 69507418 D1 19990304; DE 69507418 T2 19990715; FR 2726122 A1 19960426; FR 2726122 B1 19961122; JP H08227653 A 19960903; US 5679044 A 19971021
DOCDB simple family (application)
EP 95402312 A 19951017; DE 69507418 T 19951017; FR 9412467 A 19941019; JP 29377495 A 19951018; US 53546595 A 19950928