EP 0712134 A2 19960515 - Semiconductor memory
Title (en)
Semiconductor memory
Title (de)
Halbleiterspeicher
Title (fr)
Mémoire à semi-conducteurs
Publication
Application
Priority
JP 27626094 A 19941110
Abstract (en)
In a DRAM or similar memory having sense amplifiers coupled to memory cells, a sense amplifier is switchably connected to a discharge circuit to discharge the terminal of the sense amplifier at high speed. The node of the sense amplifier is also coupled to a discharge circuit which discharges the node at a slower speed. In operation, only the node of a selected sense amplifier is discharged at high speed, while other non-selected sense amplifiers are activated by discharging the sense amplifier node at a lower speed. This mode of operation allows for the high speed activation of the selected sense amplifier with the associated current consumption being limited to that necessary to discharge the individual sense amplifier selected. The two discharge circuits may be two N channel MOS transistors connecting the node of the sense amplifier to two drive lines driven by independent circuits. The higher speed discharge circuit is implemented as an N channel MOS transistor which is switched by a signal from the column select line. <IMAGE>
IPC 1-7
IPC 8 full level
G11C 7/06 (2006.01); G11C 11/401 (2006.01); G11C 11/409 (2006.01); G11C 11/4091 (2006.01); G11C 11/419 (2006.01); H01L 21/8242 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP KR US)
G11C 7/065 (2013.01 - EP US); G11C 11/409 (2013.01 - KR); G11C 11/4091 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0712134 A2 19960515; EP 0712134 A3 19990512; EP 0712134 B1 20020529; CN 1121694 C 20030917; CN 1156314 A 19970806; DE 69526834 D1 20020704; DE 69526834 T2 20030102; JP 3028913 B2 20000404; JP H08138378 A 19960531; KR 100197764 B1 19990615; KR 960019736 A 19960617; TW 421742 B 20010211; US 5625599 A 19970429
DOCDB simple family (application)
EP 95307395 A 19951018; CN 95118791 A 19951110; DE 69526834 T 19951018; JP 27626094 A 19941110; KR 19950040584 A 19951110; TW 84113359 A 19951214; US 54838695 A 19951026