Global Patent Index - EP 0715342 A3

EP 0715342 A3 19961016 - Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same

Title (en)

Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same

Title (de)

Vorrichtung zur Wärmebehandlung von einzigen Scheiben und Verfahren zur Herstellung eines Reaktorgefäss dafür

Title (fr)

Appareil pour le traitement thermique de tranches individuelles et méthode de fabrication de l'enceinte de reaction utilisée pour le traitement

Publication

EP 0715342 A3 19961016 (EN)

Application

EP 95118865 A 19951130

Priority

JP 32140694 A 19941130

Abstract (en)

[origin: EP0715342A2] A wafer heat-treatment apparatus is known, comprising a reactor vessel having a ceiling portion and a side portion, and heater or heaters installed outside or inside the reactor vessel, whereby a single wafer is disposed at a predetermined position in the vessel for heat-treatment by means of heat from the heater or heaters. To provide a single-wafer heat-treatment apparatus with securement of enough strength in heat-treatment of a semiconductor wafer of an enlarged diameter of as large as 8 inches to 12 inches and improved working efficiency in exchange of wafers and facilitation of operation in a single-wafer heat-treatment, it is suggested that at least a heated region of the reactor vessel is manufactured as substantially a single quartz glass body with no welded portion, and at least a part of the heated region is translucent or opaque by bubbles distributed almost throughout the bulk of the region. <IMAGE>

IPC 1-7

H01L 21/00; C23C 16/46; F27B 17/00

IPC 8 full level

C03B 19/09 (2006.01); C03C 3/06 (2006.01); C03C 11/00 (2006.01); C23C 16/46 (2006.01); C23C 16/54 (2006.01); C30B 25/08 (2006.01); H01L 21/00 (2006.01); H01L 21/22 (2006.01); H01L 21/31 (2006.01)

CPC (source: EP)

C03B 19/095 (2013.01); C03C 3/06 (2013.01); C03C 11/007 (2013.01); C23C 16/46 (2013.01); C23C 16/54 (2013.01); C30B 25/08 (2013.01); H01L 21/67098 (2013.01); C03C 2201/80 (2013.01); Y02P 40/57 (2015.11)

Citation (search report)

  • [A] US 4911896 A 19900327 - BIHUNIAK PETER P [US], et al
  • [A] US 4926793 A 19900522 - ARIMA NOBURU [JP], et al
  • [A] US 5306388 A 19940426 - NAKAJIMA TOSHIO [JP], et al
  • [A] WO 9417353 A1 19940804 - MOORE EPITAXIAL INC [US]
  • [A] DE 543957 C 19320212 - HERAEUS GMBH W C
  • [X] PATENT ABSTRACTS OF JAPAN vol. 007, no. 267 (E - 213) 29 November 1983 (1983-11-29)
  • [X] DATABASE WPI Section Ch Week 8418, Derwent World Patents Index; Class L03, AN 84-110288, XP002007643
  • [X] DATABASE WPI Section Ch Week 9306, Derwent World Patents Index; Class L03, AN 93-049500, XP002006888
  • [X] DATABASE WPI Section Ch Week 9014, Derwent World Patents Index; Class J04, AN 90-104013, XP002007533

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0715342 A2 19960605; EP 0715342 A3 19961016; EP 0715342 B1 20020828; DE 69527918 D1 20021002; DE 69527918 T2 20030424; JP 3011866 B2 20000221; JP H08162423 A 19960621

DOCDB simple family (application)

EP 95118865 A 19951130; DE 69527918 T 19951130; JP 32140694 A 19941130